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@INPROCEEDINGS{Wrdenweber:203506,
author = {Wördenweber, Roger and Schwarzkopf, J and cai, biya and
Dai, Yang and Braun, D and Schubert, Jürgen and Hollmann,
Eugen},
title = {{T}ailoring the {P}roperties of {F}erroelectric {F}ilms via
{C}ompressive and {T}ensile {S}train},
reportid = {FZJ-2015-05427},
year = {2015},
abstract = {The impact of anisotropic biaxial strain on the
ferroelectric properties of thin oxide films (20-100nm) are
examined using the example of epitaxial NaNbO3 and SrTiO3
films that are grown on single-crystalline oxide substrates
with different lattice mismatch, leading to compressive and
tensile in-plane strain, respectively. Generally, tensile
in-plane strain leads to an increase of the ferroelectric
in-plane transition temperature whereas compressive strain
tends to decrease the transition temperature. Shifts of the
transition temperature by several 100K can easily be
obtained via this method leading to room-temperature
permittivity of several 1000. Our investigations have shown
that the phase transition itself and the ferroelectric
states of the anisotropically strained films turn out to be
highly complex. First, the transition temperature depends on
the direction of the applied electric field which
contradicts the concept of an uniform phase transition for a
given system. Second, all systems, that we examined, showed
relaxor properties which are usually expected for systems
consisting of a mixture of phases. Third, most ferroelectric
properties strongly depend on the applied electric field.
This can partially be explained by Rayleigh law, however
especially for the tensile strained SrTiO3 terms of higher
order in the field dependence of the permittivity indicate
the strong impact of pinning of domain walls and polar
regions (e.g. polar nano regions). Finally at elevated
temperature an anisotropic conductivity is observed. The
latter might attributed to domain wall conductance. The
different observations are discussed in terms of existing
models, potential application of the different properties
will be sketched.},
month = {Oct},
date = {2015-10-07},
organization = {Workshop on Oxide Electronics 22,
Paris (France), 7 Oct 2015 - 9 Oct
2015},
subtyp = {After Call},
cin = {PGI-8 / JARA-FIT / PGI-9},
cid = {I:(DE-Juel1)PGI-8-20110106 / $I:(DE-82)080009_20140620$ /
I:(DE-Juel1)PGI-9-20110106},
pnm = {523 - Controlling Configuration-Based Phenomena (POF3-523)},
pid = {G:(DE-HGF)POF3-523},
typ = {PUB:(DE-HGF)6},
url = {https://juser.fz-juelich.de/record/203506},
}