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000020462 084__ $$2WoS$$aPhysics, Multidisciplinary
000020462 1001_ $$0P:(DE-Juel1)138943$$aKorte, S.$$b0$$uFZJ
000020462 245__ $$aSelective Adsorption of C60 on Ge/Si Nanostructures
000020462 260__ $$aCollege Park, Md.$$bAPS$$c2012
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000020462 440_0 $$04925$$aPhysical Review Letters$$v108$$x0031-9007$$y11
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000020462 520__ $$aSelective adsorption of C-60 on nanoscale Ge areas can be achieved, while neighboring Si(111) areas remain uncovered, if the whole surface is initially terminated by Bi. Fullerene chemisorption is found at Bi vacancies which form due to partial thermal desorption of the Bi surfactant. The growth rate and temperature dependence of the C-60 adsorption were measured using scanning tunneling microscopy and are described consistently by a rate equation model. The selectivity of the C-60 adsorption can be traced back to an easier vacancy formation in the Bi layer on top of the Ge areas compared to the Si areas. Furthermore, it is also possible to desorb C-60 from Ge areas, allowing the use of C-60 as a resist on the nanoscale.
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000020462 7001_ $$0P:(DE-Juel1)VDB71268$$aRomanyuk, K.$$b1$$uFZJ
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000020462 7001_ $$0P:(DE-Juel1)VDB10516$$aCherepanov, V.$$b3$$uFZJ
000020462 7001_ $$0P:(DE-Juel1)VDB5601$$aVoigtländer, B.$$b4$$uFZJ
000020462 7001_ $$0P:(DE-Juel1)VDB105823$$aFilimonov, S.N.$$b5$$uFZJ
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000020462 8567_ $$uhttp://dx.doi.org/10.1103/PhysRevLett.108.116101
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