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| 001 | 20462 | ||
| 005 | 20200423203213.0 | ||
| 024 | 7 | _ | |a 10.1103/PhysRevLett.108.116101 |2 DOI |
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| 100 | 1 | _ | |a Korte, S. |b 0 |u FZJ |0 P:(DE-Juel1)138943 |
| 245 | _ | _ | |a Selective Adsorption of C60 on Ge/Si Nanostructures |
| 260 | _ | _ | |a College Park, Md. |b APS |c 2012 |
| 300 | _ | _ | |a 116101 |
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| 440 | _ | 0 | |a Physical Review Letters |x 0031-9007 |0 4925 |y 11 |v 108 |
| 500 | _ | _ | |3 POF3_Assignment on 2016-02-29 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a Selective adsorption of C-60 on nanoscale Ge areas can be achieved, while neighboring Si(111) areas remain uncovered, if the whole surface is initially terminated by Bi. Fullerene chemisorption is found at Bi vacancies which form due to partial thermal desorption of the Bi surfactant. The growth rate and temperature dependence of the C-60 adsorption were measured using scanning tunneling microscopy and are described consistently by a rate equation model. The selectivity of the C-60 adsorption can be traced back to an easier vacancy formation in the Bi layer on top of the Ge areas compared to the Si areas. Furthermore, it is also possible to desorb C-60 from Ge areas, allowing the use of C-60 as a resist on the nanoscale. |
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| 773 | _ | _ | |a 10.1103/PhysRevLett.108.116101 |g Vol. 108, p. 116101 |p 116101 |q 108<116101 |0 PERI:(DE-600)1472655-5 |t Physical review letters |v 108 |y 2012 |x 0031-9007 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1103/PhysRevLett.108.116101 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/20462/files/FZJ-20462.pdf |y OpenAccess |z Published final document. |
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