% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Peranio:20467,
      author       = {Peranio, N. and Winkler, M. and Bessas, D. and Aabdin, Z.
                      and König, J. and Böttner, H. and Hermann, R. and Eibl,
                      O.},
      title        = {{R}oom-temperature {MBE} deposition, thermoelectric
                      properties, and advanced structural characterization of
                      binary {B}i2{T}e3 and {S}b2{T}e3 thin films},
      journal      = {Journal of alloys and compounds},
      volume       = {521},
      issn         = {0925-8388},
      address      = {Lausanne},
      publisher    = {Elsevier},
      reportid     = {PreJuSER-20467},
      pages        = {163 - 173},
      year         = {2012},
      note         = {The authors gratefully acknowledge financial support by the
                      German Research Society DFG, priority programme 1386
                      "Nanostructured Thermoelectric Materials: Theory, Model
                      Systems and Controlled Synthesis." R.P.H. and D.B.
                      acknowledge the Advanced Photon Source for provision of
                      synchrotron radiation beam time and the help of Dr. D.
                      Robinson during data acquisition at 6-IDD. R. P. H.
                      acknowledges support from the Helmholtz-University Young
                      Investigator Group "Lattice Dynamics in Emerging Functional
                      Materials."},
      abstract     = {Sb2Te3 and Bi2Te3 thin films were grown at room temperature
                      on SiO2 and BaF2 substrates using molecular beam epitaxy. A
                      layer-by-layer growth was achieved such that metallic layers
                      of the elements with 0.2 nm thickness were deposited. The
                      layer structure in the as-deposited films was confirmed by
                      X-ray diffraction and was seen more clearly in Sb2Te3 thin
                      films. Subsequent annealing was done at 250 degrees C for 2
                      h and produced the Sb2Te3 and Bi2Te3 crystal structure as
                      confirmed by high-energy X-ray diffraction. This preparation
                      process is referred to as nano-alloying and it was
                      demonstrated to yield single-phase thin films of these
                      compounds. In the thin films a significant texture could be
                      identified with the crystal c axis being almost parallel to
                      the growth direction for Sb2Te3 and tilted by about 30
                      degrees for Bi2Te3 thin films. Inplane transport properties
                      were measured for the annealed films at room temperature.
                      Both films yielded a charge carrier density of about 2.6 x
                      10(19) cm (3). The Sb2Te3 films were p-type, had a
                      thermopower of +130 mu V K-1, and surprisingly high
                      mobilities of 402 cm(2) V-1 s(-1). The Bi2Te3 films were
                      n-type, showed a thermopower of -153 mu V K-1, and yielded
                      significantly smaller mobilities of 80 cm(2) V-1 s(-1). The
                      chemical composition and microstructure of the films were
                      investigated by transmission electron microscopy (TEM) on
                      cross sections of the thin films. The grain sizes were about
                      500 nm for the Sb2Te3 and 250 nm for the Bi2Te3 films. In
                      the Bi2Te3 thin film, energy-filtered TEM allowed to image a
                      Bi-rich grain boundary phase, several nanometers thick. This
                      secondary phase explains the poor mobilities of the Bi2Te3
                      thin film. With these results the high potential of the
                      nano-alloying deposition technique for growing films with a
                      more complex layer architecture is demonstrated. (C) 2012
                      Elsevier B.V. All rights reserved.},
      keywords     = {J (WoSType)},
      cin          = {PGI-4 / JCNS-2 / JARA-FIT},
      ddc          = {670},
      cid          = {I:(DE-Juel1)PGI-4-20110106 / I:(DE-Juel1)JCNS-2-20110106 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien
                      (FUEK412) / 544 - In-house Research with PNI (POF2-544)},
      pid          = {G:(DE-Juel1)FUEK412 / G:(DE-HGF)POF2-544},
      shelfmark    = {Chemistry, Physical / Materials Science, Multidisciplinary
                      / Metallurgy $\&$ Metallurgical Engineering},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000300822300029},
      doi          = {10.1016/j.jallcom.2012.01.108},
      url          = {https://juser.fz-juelich.de/record/20467},
}