TY  - JOUR
AU  - Greenlee, Jordan D.
AU  - Specht, Petra
AU  - Anderson, Travis J.
AU  - Koehler, Andrew D.
AU  - Weaver, Bradley D.
AU  - Luysberg, Martina
AU  - Dubon, Oscar D.
AU  - Kub, Francis J.
AU  - Weatherford, Todd R.
AU  - Hobart, Karl D.
TI  - Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs
JO  - Applied physics letters
VL  - 107
IS  - 8
SN  - 1077-3118
CY  - Melville, NY
PB  - American Inst. of Physics
M1  - FZJ-2015-05483
SP  - 083504 -
PY  - 2015
AB  - Proton-induced damage in AlGaN/GaN HEMTs was investigated using energy-dispersive X-ray spectroscopy (EDS) and transmission electron microscopy (TEM), and simulated using a Monte Carlo technique. The results were correlated to electrical degradation using Hall measurements. It was determined by EDS that the interface between GaN and AlGaN in the irradiated HEMT was broadened by 2.2 nm, as estimated by the width of the Al EDS signal compared to the as-grown interface. The simulation results show a similar Al broadening effect. The extent of interfacial roughening was examined using high resolution TEM. At a 2 MeV proton fluence of 6 × 1014 H+/cm2, the electrical effects associated with the Al broadening and surface roughening include a degradation of the ON-resistance and a decrease in the electron mobility and 2DEG sheet carrier density by 28.9% and 12.1%, respectively.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000360593900071
DO  - DOI:10.1063/1.4929583
UR  - https://juser.fz-juelich.de/record/204890
ER  -