TY  - JOUR
AU  - Mesic, B.
AU  - Schroeder, H.
TI  - Properties of TaSiN thin films deposited by reactive radio frequency magnetron sputtering
JO  - Thin solid films
VL  - 520
SN  - 0040-6090
CY  - Amsterdam [u.a.]
PB  - Elsevier
M1  - PreJuSER-20616
SP  - 4497 - 4500
PY  - 2012
N1  - Record converted from VDB: 12.11.2012
AB  - TaSiN is a promising material for application as electrically conductive diffusion barrier for the integration of high permittivity perovskite materials in integrated circuits. TaSiN thin films were deposited by reactive radio frequency magnetron sputtering using TaSi and TaSi2.7 targets in an Ar/N-2 atmosphere. The sputter power was varied in order to achieve different TaSiN compositions. The stoichiometry of as-deposited films was estimated using Rutherford backscattering spectroscopy. The as-deposited TaSiN thin films are amorphous. Their crystallization temperature is above 700 degrees C and increases with higher nitrogen content. They have metallic conduction and ohmic behavior. The resistivity of as deposited films is in the range from 10(-6)Omega m up to 10(-3)Omega m and increases with nitrogen content. It was found that p(++)-Si/Ta21Si57N21 develops unacceptable high contact resistance. Introducing an intermediate Pt layer the stack p(++)-Si/Pt/Ta21Si57N21 had a good conductive properties and good thermal stability at 700 degrees C. (C) 2012 Elsevier B.V. All rights reserved.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000303084200047
DO  - DOI:10.1016/j.tsf.2012.02.068
UR  - https://juser.fz-juelich.de/record/20616
ER  -