% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Mesic:20616,
      author       = {Mesic, B. and Schroeder, H.},
      title        = {{P}roperties of {T}a{S}i{N} thin films deposited by
                      reactive radio frequency magnetron sputtering},
      journal      = {Thin solid films},
      volume       = {520},
      issn         = {0040-6090},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier},
      reportid     = {PreJuSER-20616},
      pages        = {4497 - 4500},
      year         = {2012},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {TaSiN is a promising material for application as
                      electrically conductive diffusion barrier for the
                      integration of high permittivity perovskite materials in
                      integrated circuits. TaSiN thin films were deposited by
                      reactive radio frequency magnetron sputtering using TaSi and
                      TaSi2.7 targets in an Ar/N-2 atmosphere. The sputter power
                      was varied in order to achieve different TaSiN compositions.
                      The stoichiometry of as-deposited films was estimated using
                      Rutherford backscattering spectroscopy. The as-deposited
                      TaSiN thin films are amorphous. Their crystallization
                      temperature is above 700 degrees C and increases with higher
                      nitrogen content. They have metallic conduction and ohmic
                      behavior. The resistivity of as deposited films is in the
                      range from 10(-6)Omega m up to 10(-3)Omega m and increases
                      with nitrogen content. It was found that
                      p(++)-Si/Ta21Si57N21 develops unacceptable high contact
                      resistance. Introducing an intermediate Pt layer the stack
                      p(++)-Si/Pt/Ta21Si57N21 had a good conductive properties and
                      good thermal stability at 700 degrees C. (C) 2012 Elsevier
                      B.V. All rights reserved.},
      keywords     = {J (WoSType)},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {070},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Materials Science, Multidisciplinary / Materials Science,
                      Coatings $\&$ Films / Physics, Applied / Physics, Condensed
                      Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000303084200047},
      doi          = {10.1016/j.tsf.2012.02.068},
      url          = {https://juser.fz-juelich.de/record/20616},
}