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| Hauptseite > Publikationsdatenbank > Properties of TaSiN thin films deposited by reactive radio frequency magnetron sputtering > print |
| Hauptseite > Publikationsdatenbank > Properties of TaSiN thin films deposited by reactive radio frequency magnetron sputtering > print |
| 001 | 20616 | ||
| 005 | 20190625112111.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1016/j.tsf.2012.02.068 |
| 024 | 7 | _ | |2 WOS |a WOS:000303084200047 |
| 024 | 7 | _ | |a altmetric:620470 |2 altmetric |
| 037 | _ | _ | |a PreJuSER-20616 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 070 |
| 084 | _ | _ | |2 WoS |a Materials Science, Multidisciplinary |
| 084 | _ | _ | |2 WoS |a Materials Science, Coatings & Films |
| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 084 | _ | _ | |2 WoS |a Physics, Condensed Matter |
| 100 | 1 | _ | |a Mesic, B. |b 0 |u FZJ |0 P:(DE-Juel1)VDB74423 |
| 245 | _ | _ | |a Properties of TaSiN thin films deposited by reactive radio frequency magnetron sputtering |
| 260 | _ | _ | |a Amsterdam [u.a.] |b Elsevier |c 2012 |
| 300 | _ | _ | |a 4497 - 4500 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Thin Solid Films |x 0040-6090 |0 5762 |y 13 |v 520 |
| 500 | _ | _ | |3 POF3_Assignment on 2016-02-29 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a TaSiN is a promising material for application as electrically conductive diffusion barrier for the integration of high permittivity perovskite materials in integrated circuits. TaSiN thin films were deposited by reactive radio frequency magnetron sputtering using TaSi and TaSi2.7 targets in an Ar/N-2 atmosphere. The sputter power was varied in order to achieve different TaSiN compositions. The stoichiometry of as-deposited films was estimated using Rutherford backscattering spectroscopy. The as-deposited TaSiN thin films are amorphous. Their crystallization temperature is above 700 degrees C and increases with higher nitrogen content. They have metallic conduction and ohmic behavior. The resistivity of as deposited films is in the range from 10(-6)Omega m up to 10(-3)Omega m and increases with nitrogen content. It was found that p(++)-Si/Ta21Si57N21 develops unacceptable high contact resistance. Introducing an intermediate Pt layer the stack p(++)-Si/Pt/Ta21Si57N21 had a good conductive properties and good thermal stability at 700 degrees C. (C) 2012 Elsevier B.V. All rights reserved. |
| 536 | _ | _ | |a Grundlagen für zukünftige Informationstechnologien |c P42 |2 G:(DE-HGF) |0 G:(DE-Juel1)FUEK412 |x 0 |
| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |a J |2 WoSType |
| 653 | 2 | 0 | |2 Author |a Tantalum silicon nitride |
| 653 | 2 | 0 | |2 Author |a Oxygen diffusion barrier |
| 653 | 2 | 0 | |2 Author |a Crystallization temperature |
| 653 | 2 | 0 | |2 Author |a Electric resistivity |
| 653 | 2 | 0 | |2 Author |a Reactive sputtering |
| 653 | 2 | 0 | |2 Author |a X-ray diffraction |
| 700 | 1 | _ | |a Schroeder, H. |b 1 |u FZJ |0 P:(DE-Juel1)VDB3130 |
| 773 | _ | _ | |a 10.1016/j.tsf.2012.02.068 |g Vol. 520, p. 4497 - 4500 |p 4497 - 4500 |q 520<4497 - 4500 |0 PERI:(DE-600)1482896-0 |t Thin solid films |v 520 |y 2012 |x 0040-6090 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1016/j.tsf.2012.02.068 |
| 909 | C | O | |o oai:juser.fz-juelich.de:20616 |p VDB |
| 913 | 1 | _ | |b Schlüsseltechnologien |k P42 |l Grundlagen für zukünftige Informationstechnologien (FIT) |1 G:(DE-HGF)POF2-420 |0 G:(DE-Juel1)FUEK412 |2 G:(DE-HGF)POF2-400 |v Grundlagen für zukünftige Informationstechnologien |x 0 |
| 913 | 2 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-529H |2 G:(DE-HGF)POF3-500 |v Addenda |x 0 |
| 914 | 1 | _ | |y 2012 |
| 915 | _ | _ | |a JCR/ISI refereed |0 StatID:(DE-HGF)0010 |2 StatID |
| 915 | _ | _ | |a JCR |0 StatID:(DE-HGF)0100 |2 StatID |
| 915 | _ | _ | |a WoS |0 StatID:(DE-HGF)0110 |2 StatID |b Science Citation Index |
| 915 | _ | _ | |a WoS |0 StatID:(DE-HGF)0111 |2 StatID |b Science Citation Index Expanded |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0150 |2 StatID |b Web of Science Core Collection |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0199 |2 StatID |b Thomson Reuters Master Journal List |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0200 |2 StatID |b SCOPUS |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0300 |2 StatID |b Medline |
| 915 | _ | _ | |a Nationallizenz |0 StatID:(DE-HGF)0420 |2 StatID |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)1030 |2 StatID |b Current Contents - Life Sciences |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)1150 |2 StatID |b Current Contents - Physical, Chemical and Earth Sciences |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-7-20110106 |k PGI-7 |l Elektronische Materialien |g PGI |x 0 |
| 920 | 1 | _ | |0 I:(DE-82)080009_20140620 |k JARA-FIT |l Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology |g JARA |x 1 |
| 970 | _ | _ | |a VDB:(DE-Juel1)136223 |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a ConvertedRecord |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-7-20110106 |
| 980 | _ | _ | |a I:(DE-82)080009_20140620 |
| 980 | _ | _ | |a UNRESTRICTED |
| 981 | _ | _ | |a I:(DE-Juel1)VDB881 |
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