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000020899 0247_ $$2DOI$$a10.1016/j.tsf.2012.03.036
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000020899 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000020899 084__ $$2WoS$$aMaterials Science, Coatings & Films
000020899 084__ $$2WoS$$aPhysics, Applied
000020899 084__ $$2WoS$$aPhysics, Condensed Matter
000020899 1001_ $$0P:(DE-HGF)0$$aBrose, S.$$b0
000020899 245__ $$aBroadband transmission masks, gratings and filters for extreme ultraviolet and soft X-ray lithography
000020899 260__ $$aAmsterdam [u.a.]$$bElsevier$$c2012
000020899 300__ $$a5080 - 5085
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000020899 440_0 $$05762$$aThin Solid Films$$v520$$x0040-6090$$y15
000020899 500__ $$3POF3_Assignment on 2016-02-29
000020899 500__ $$aThis work was enabled by cooperation activities in the frame of the Julich Aachen Research Alliance for Fundamentals of Future Information Technology (JARA-FIT). We would also like to acknowledge the excellent cleanroom staff at the Forschungszentrum Julich for their helpful assistance during the work. Furthermore, we acknowledge the support of COST Action MP0601 "Short Wavelength Laboratory Sources".
000020899 520__ $$aLithography and patterning on a nanometre scale with extreme ultraviolet (EUV) and soft X-ray radiation allow creation of high resolution, high density patterns independent of a substrate type. To realize the full potential of this method, especially for EUV proximity printing and interference lithography, a reliable technology for manufacturing of the transmission masks and gratings should be available. In this paper we present a development of broadband amplitude transmission masks and gratings for extreme ultraviolet and soft X-ray lithography based on free-standing niobium membranes. In comparison with a standard silicon nitride based technology the transmission masks demonstrate high contrast not only for in-band EUV (13.5 nm) radiation but also for wavelengths below Si L-absorption edge (12.4 nm).The masks and filters with free standing areas up to 1000 x 1000 mu m(2) and 100 nm to 300 nm membrane thicknesses are shown. Electron beam structuring of an absorber layer with dense line and dot patterns with sub-50 nm structures is demonstrated. Diffractive and filtering properties of obtained structures are examined with EUV radiation from a gas discharge plasma source. (C) 2012 Elsevier B.V. All rights reserved.
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000020899 65320 $$2Author$$aExtreme ultraviolet
000020899 65320 $$2Author$$aSoft X-ray
000020899 65320 $$2Author$$aInterference lithography
000020899 65320 $$2Author$$aHigh efficiency
000020899 65320 $$2Author$$aTransmission grating
000020899 65320 $$2Author$$aFilters
000020899 65320 $$2Author$$aMembrane
000020899 650_7 $$2WoSType$$aJ
000020899 7001_ $$0P:(DE-HGF)0$$aDanylyuk, S.$$b1
000020899 7001_ $$0P:(DE-HGF)0$$aJuschkin, L.$$b2
000020899 7001_ $$0P:(DE-HGF)0$$aDittberner, C.$$b3
000020899 7001_ $$0P:(DE-HGF)0$$aBergmann, K.$$b4
000020899 7001_ $$0P:(DE-Juel1)VDB5547$$aMoers, J.$$b5$$uFZJ
000020899 7001_ $$0P:(DE-Juel1)128715$$aPanaitov, G.$$b6$$uFZJ
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000020899 8567_ $$uhttp://dx.doi.org/10.1016/j.tsf.2012.03.036
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