% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Brose:20899,
      author       = {Brose, S. and Danylyuk, S. and Juschkin, L. and Dittberner,
                      C. and Bergmann, K. and Moers, J. and Panaitov, G. and
                      Trellenkamp, St. and Loosen, P. and Grützmacher, D.},
      title        = {{B}roadband transmission masks, gratings and filters for
                      extreme ultraviolet and soft {X}-ray lithography},
      journal      = {Thin solid films},
      volume       = {520},
      issn         = {0040-6090},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier},
      reportid     = {PreJuSER-20899},
      pages        = {5080 - 5085},
      year         = {2012},
      note         = {This work was enabled by cooperation activities in the
                      frame of the Julich Aachen Research Alliance for
                      Fundamentals of Future Information Technology (JARA-FIT). We
                      would also like to acknowledge the excellent cleanroom staff
                      at the Forschungszentrum Julich for their helpful assistance
                      during the work. Furthermore, we acknowledge the support of
                      COST Action MP0601 "Short Wavelength Laboratory Sources".},
      abstract     = {Lithography and patterning on a nanometre scale with
                      extreme ultraviolet (EUV) and soft X-ray radiation allow
                      creation of high resolution, high density patterns
                      independent of a substrate type. To realize the full
                      potential of this method, especially for EUV proximity
                      printing and interference lithography, a reliable technology
                      for manufacturing of the transmission masks and gratings
                      should be available. In this paper we present a development
                      of broadband amplitude transmission masks and gratings for
                      extreme ultraviolet and soft X-ray lithography based on
                      free-standing niobium membranes. In comparison with a
                      standard silicon nitride based technology the transmission
                      masks demonstrate high contrast not only for in-band EUV
                      (13.5 nm) radiation but also for wavelengths below Si
                      L-absorption edge (12.4 nm).The masks and filters with free
                      standing areas up to 1000 x 1000 mu m(2) and 100 nm to 300
                      nm membrane thicknesses are shown. Electron beam structuring
                      of an absorber layer with dense line and dot patterns with
                      sub-50 nm structures is demonstrated. Diffractive and
                      filtering properties of obtained structures are examined
                      with EUV radiation from a gas discharge plasma source. (C)
                      2012 Elsevier B.V. All rights reserved.},
      keywords     = {J (WoSType)},
      cin          = {PGI-8 / JARA-FIT / PGI-9},
      ddc          = {070},
      cid          = {I:(DE-Juel1)PGI-8-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)PGI-9-20110106},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Materials Science, Multidisciplinary / Materials Science,
                      Coatings $\&$ Films / Physics, Applied / Physics, Condensed
                      Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000304568300046},
      doi          = {10.1016/j.tsf.2012.03.036},
      url          = {https://juser.fz-juelich.de/record/20899},
}