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024 7 _ |2 DOI
|a 10.1016/j.tsf.2012.03.036
024 7 _ |2 WOS
|a WOS:000304568300046
037 _ _ |a PreJuSER-20899
041 _ _ |a eng
082 _ _ |a 070
084 _ _ |2 WoS
|a Materials Science, Multidisciplinary
084 _ _ |2 WoS
|a Materials Science, Coatings & Films
084 _ _ |2 WoS
|a Physics, Applied
084 _ _ |2 WoS
|a Physics, Condensed Matter
100 1 _ |0 P:(DE-HGF)0
|a Brose, S.
|b 0
245 _ _ |a Broadband transmission masks, gratings and filters for extreme ultraviolet and soft X-ray lithography
260 _ _ |a Amsterdam [u.a.]
|b Elsevier
|c 2012
300 _ _ |a 5080 - 5085
336 7 _ |a Journal Article
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440 _ 0 |0 5762
|a Thin Solid Films
|v 520
|x 0040-6090
|y 15
500 _ _ |3 POF3_Assignment on 2016-02-29
500 _ _ |a This work was enabled by cooperation activities in the frame of the Julich Aachen Research Alliance for Fundamentals of Future Information Technology (JARA-FIT). We would also like to acknowledge the excellent cleanroom staff at the Forschungszentrum Julich for their helpful assistance during the work. Furthermore, we acknowledge the support of COST Action MP0601 "Short Wavelength Laboratory Sources".
520 _ _ |a Lithography and patterning on a nanometre scale with extreme ultraviolet (EUV) and soft X-ray radiation allow creation of high resolution, high density patterns independent of a substrate type. To realize the full potential of this method, especially for EUV proximity printing and interference lithography, a reliable technology for manufacturing of the transmission masks and gratings should be available. In this paper we present a development of broadband amplitude transmission masks and gratings for extreme ultraviolet and soft X-ray lithography based on free-standing niobium membranes. In comparison with a standard silicon nitride based technology the transmission masks demonstrate high contrast not only for in-band EUV (13.5 nm) radiation but also for wavelengths below Si L-absorption edge (12.4 nm).The masks and filters with free standing areas up to 1000 x 1000 mu m(2) and 100 nm to 300 nm membrane thicknesses are shown. Electron beam structuring of an absorber layer with dense line and dot patterns with sub-50 nm structures is demonstrated. Diffractive and filtering properties of obtained structures are examined with EUV radiation from a gas discharge plasma source. (C) 2012 Elsevier B.V. All rights reserved.
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653 2 0 |2 Author
|a Extreme ultraviolet
653 2 0 |2 Author
|a Soft X-ray
653 2 0 |2 Author
|a Interference lithography
653 2 0 |2 Author
|a High efficiency
653 2 0 |2 Author
|a Transmission grating
653 2 0 |2 Author
|a Filters
653 2 0 |2 Author
|a Membrane
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|a Danylyuk, S.
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|a Juschkin, L.
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|a Dittberner, C.
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|a Trellenkamp, St.
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|a Loosen, P.
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700 1 _ |0 P:(DE-Juel1)125588
|a Grützmacher, D.
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|g Vol. 520, p. 5080 - 5085
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|t Thin solid films
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856 7 _ |u http://dx.doi.org/10.1016/j.tsf.2012.03.036
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