%0 Journal Article
%A Wirths, S.
%A Weis, K.
%A Winden, A.
%A Sladek, K.
%A Volk, C.
%A Alagha, S.
%A Weirich, T.E.
%A von der Ahe, M.
%A Hardtdegen, H.
%A Lüth, H.
%A Demarina, N.
%A Grützmacher, D.
%A Schäpers, Th.
%T Effect of Si-doping on InAs nanowire transport and morphology
%J Journal of applied physics
%V 110
%@ 0021-8979
%C Melville, NY
%I American Institute of Physics
%M PreJuSER-21110
%P 053709
%D 2011
%Z Record converted from VDB: 12.11.2012
%X The effect of Si-doping on the morphology, structure, and transport properties of nanowires was investigated. The nanowires were deposited by selective-area metal organic vapor phase epitaxy in an N-2 ambient. It is observed that doping systematically affects the nanowire morphology but not the structure of the nanowires. However, the transport properties of the wires are greatly affected. Room-temperature four-terminal measurements show that with an increasing dopant supply the conductivity monotonously increases. For the highest doping level the conductivity is higher by a factor of 25 compared to only intrinsically doped reference nanowires. By means of back-gate field-effect transistor measurements it was confirmed that the doping results in an increased carrier concentration. Temperature dependent resistance measurements reveal, for lower doping concentrations, a thermally activated semiconductor-type increase of the conductivity. In contrast, the nanowires with the highest doping concentration show a metal-type decrease of the resistivity with decreasing temperature. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3631026]
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000294968600072
%R 10.1063/1.3631026
%U https://juser.fz-juelich.de/record/21110