TY  - JOUR
AU  - Wirths, S.
AU  - Weis, K.
AU  - Winden, A.
AU  - Sladek, K.
AU  - Volk, C.
AU  - Alagha, S.
AU  - Weirich, T.E.
AU  - von der Ahe, M.
AU  - Hardtdegen, H.
AU  - Lüth, H.
AU  - Demarina, N.
AU  - Grützmacher, D.
AU  - Schäpers, Th.
TI  - Effect of Si-doping on InAs nanowire transport and morphology
JO  - Journal of applied physics
VL  - 110
SN  - 0021-8979
CY  - Melville, NY
PB  - American Institute of Physics
M1  - PreJuSER-21110
SP  - 053709
PY  - 2011
N1  - Record converted from VDB: 12.11.2012
AB  - The effect of Si-doping on the morphology, structure, and transport properties of nanowires was investigated. The nanowires were deposited by selective-area metal organic vapor phase epitaxy in an N-2 ambient. It is observed that doping systematically affects the nanowire morphology but not the structure of the nanowires. However, the transport properties of the wires are greatly affected. Room-temperature four-terminal measurements show that with an increasing dopant supply the conductivity monotonously increases. For the highest doping level the conductivity is higher by a factor of 25 compared to only intrinsically doped reference nanowires. By means of back-gate field-effect transistor measurements it was confirmed that the doping results in an increased carrier concentration. Temperature dependent resistance measurements reveal, for lower doping concentrations, a thermally activated semiconductor-type increase of the conductivity. In contrast, the nanowires with the highest doping concentration show a metal-type decrease of the resistivity with decreasing temperature. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3631026]
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000294968600072
DO  - DOI:10.1063/1.3631026
UR  - https://juser.fz-juelich.de/record/21110
ER  -