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@ARTICLE{Wirths:21110,
      author       = {Wirths, S. and Weis, K. and Winden, A. and Sladek, K. and
                      Volk, C. and Alagha, S. and Weirich, T.E. and von der Ahe,
                      M. and Hardtdegen, H. and Lüth, H. and Demarina, N. and
                      Grützmacher, D. and Schäpers, Th.},
      title        = {{E}ffect of {S}i-doping on {I}n{A}s nanowire transport and
                      morphology},
      journal      = {Journal of applied physics},
      volume       = {110},
      issn         = {0021-8979},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-21110},
      pages        = {053709},
      year         = {2011},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {The effect of Si-doping on the morphology, structure, and
                      transport properties of nanowires was investigated. The
                      nanowires were deposited by selective-area metal organic
                      vapor phase epitaxy in an N-2 ambient. It is observed that
                      doping systematically affects the nanowire morphology but
                      not the structure of the nanowires. However, the transport
                      properties of the wires are greatly affected.
                      Room-temperature four-terminal measurements show that with
                      an increasing dopant supply the conductivity monotonously
                      increases. For the highest doping level the conductivity is
                      higher by a factor of 25 compared to only intrinsically
                      doped reference nanowires. By means of back-gate
                      field-effect transistor measurements it was confirmed that
                      the doping results in an increased carrier concentration.
                      Temperature dependent resistance measurements reveal, for
                      lower doping concentrations, a thermally activated
                      semiconductor-type increase of the conductivity. In
                      contrast, the nanowires with the highest doping
                      concentration show a metal-type decrease of the resistivity
                      with decreasing temperature. (C) 2011 American Institute of
                      Physics. [doi: 10.1063/1.3631026]},
      keywords     = {J (WoSType)},
      cin          = {JARA-FIT / PGI-9},
      ddc          = {530},
      cid          = {$I:(DE-82)080009_20140620$ / I:(DE-Juel1)PGI-9-20110106},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000294968600072},
      doi          = {10.1063/1.3631026},
      url          = {https://juser.fz-juelich.de/record/21110},
}