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| Hauptseite > Publikationsdatenbank > Effect of Si-doping on InAs nanowire transport and morphology > print |
| Hauptseite > Publikationsdatenbank > Effect of Si-doping on InAs nanowire transport and morphology > print |
| 001 | 21110 | ||
| 005 | 20180208223401.0 | ||
| 024 | 7 | _ | |a 10.1063/1.3631026 |2 DOI |
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| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 100 | 1 | _ | |a Wirths, S. |b 0 |u FZJ |0 P:(DE-Juel1)VDB95114 |
| 245 | _ | _ | |a Effect of Si-doping on InAs nanowire transport and morphology |
| 260 | _ | _ | |a Melville, NY |b American Institute of Physics |c 2011 |
| 300 | _ | _ | |a 053709 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
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| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Journal of Applied Physics |x 0021-8979 |0 3051 |y 5 |v 110 |
| 500 | _ | _ | |3 POF3_Assignment on 2016-02-29 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a The effect of Si-doping on the morphology, structure, and transport properties of nanowires was investigated. The nanowires were deposited by selective-area metal organic vapor phase epitaxy in an N-2 ambient. It is observed that doping systematically affects the nanowire morphology but not the structure of the nanowires. However, the transport properties of the wires are greatly affected. Room-temperature four-terminal measurements show that with an increasing dopant supply the conductivity monotonously increases. For the highest doping level the conductivity is higher by a factor of 25 compared to only intrinsically doped reference nanowires. By means of back-gate field-effect transistor measurements it was confirmed that the doping results in an increased carrier concentration. Temperature dependent resistance measurements reveal, for lower doping concentrations, a thermally activated semiconductor-type increase of the conductivity. In contrast, the nanowires with the highest doping concentration show a metal-type decrease of the resistivity with decreasing temperature. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3631026] |
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| 700 | 1 | _ | |a Sladek, K. |b 3 |u FZJ |0 P:(DE-Juel1)VDB86963 |
| 700 | 1 | _ | |a Volk, C. |b 4 |u FZJ |0 P:(DE-Juel1)VDB71976 |
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| 700 | 1 | _ | |a Schäpers, Th. |b 12 |u FZJ |0 P:(DE-Juel1)128634 |
| 773 | _ | _ | |a 10.1063/1.3631026 |g Vol. 110, p. 053709 |p 053709 |q 110<053709 |0 PERI:(DE-600)1476463-5 |t Journal of applied physics |v 110 |y 2011 |x 0021-8979 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1063/1.3631026 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/21110/files/FZJ-21110.pdf |y Published under German "Allianz" Licensing conditions on 2011-09-12. Available in OpenAccess from 2011-09-12 |z Published final document. |
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