000021115 001__ 21115
000021115 005__ 20240610121245.0
000021115 0247_ $$2DOI$$a10.1063/1.3672447
000021115 0247_ $$2WOS$$aWOS:000299127200116
000021115 0247_ $$2Handle$$a2128/7463
000021115 037__ $$aPreJuSER-21115
000021115 041__ $$aeng
000021115 082__ $$a530
000021115 084__ $$2WoS$$aPhysics, Applied
000021115 1001_ $$0P:(DE-Juel1)VDB3163$$aTrinkaus, H.$$b0$$uFZJ
000021115 245__ $$aAnisotropy of strain relaxation in (100) and (110) Si/SiGe heterostructures
000021115 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2012
000021115 300__ $$a014904
000021115 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
000021115 3367_ $$2DataCite$$aOutput Types/Journal article
000021115 3367_ $$00$$2EndNote$$aJournal Article
000021115 3367_ $$2BibTeX$$aARTICLE
000021115 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000021115 3367_ $$2DRIVER$$aarticle
000021115 440_0 $$03051$$aJournal of Applied Physics$$v111$$x0021-8979$$y1
000021115 500__ $$3POF3_Assignment on 2016-02-29
000021115 500__ $$aRecord converted from VDB: 12.11.2012
000021115 520__ $$aPlastic strain relaxation of SiGe layers of different crystal orientations is analytically analyzed and compared with experimental results. First, strain relaxation induced by ion implantation and annealing, considering dislocation loop punching and loop interactions with interfaces/surfaces is discussed. A flexible curved dislocation model is used to determine the relation of critical layer thickness with strain/stress. Specific critical conditions to be fulfilled, at both the start and end of the relaxation, are discussed by introducing a quality parameter for efficient strain relaxation, defined as the ratio of real to ideal critical thickness versus strain/stress. The anisotropy of the resolved shear stress is discussed for (001) and (011) crystal orientations in comparison with the experimentally observed anisotropy of strain relaxation for Si/SiGe heterostructures. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3672447]
000021115 536__ $$0G:(DE-Juel1)FUEK412$$2G:(DE-HGF)$$aGrundlagen für zukünftige Informationstechnologien$$cP42$$x0
000021115 588__ $$aDataset connected to Web of Science
000021115 650_7 $$2WoSType$$aJ
000021115 7001_ $$0P:(DE-Juel1)125569$$aBuca, D.$$b1$$uFZJ
000021115 7001_ $$0P:(DE-Juel1)VDB98556$$aMinamisawa, R.A.$$b2$$uFZJ
000021115 7001_ $$0P:(DE-Juel1)125595$$aHolländer, B.$$b3$$uFZJ
000021115 7001_ $$0P:(DE-Juel1)130811$$aLuysberg, M.$$b4$$uFZJ
000021115 7001_ $$0P:(DE-Juel1)VDB4959$$aMantl, S.$$b5$$uFZJ
000021115 773__ $$0PERI:(DE-600)1476463-5$$a10.1063/1.3672447$$gVol. 111, p. 014904$$p014904$$q111<014904$$tJournal of applied physics$$v111$$x0021-8979$$y2012
000021115 8567_ $$uhttp://dx.doi.org/10.1063/1.3672447
000021115 8564_ $$uhttps://juser.fz-juelich.de/record/21115/files/FZJ-21115.pdf$$yPublished under German "Allianz" Licensing conditions on 2012-01-05. Available in OpenAccess from 2012-01-05$$zPublished final document.
000021115 8564_ $$uhttps://juser.fz-juelich.de/record/21115/files/FZJ-21115.jpg?subformat=icon-1440$$xicon-1440
000021115 8564_ $$uhttps://juser.fz-juelich.de/record/21115/files/FZJ-21115.jpg?subformat=icon-180$$xicon-180
000021115 8564_ $$uhttps://juser.fz-juelich.de/record/21115/files/FZJ-21115.jpg?subformat=icon-640$$xicon-640
000021115 909CO $$ooai:juser.fz-juelich.de:21115$$pdnbdelivery$$pVDB$$pdriver$$popen_access$$popenaire
000021115 9131_ $$0G:(DE-Juel1)FUEK412$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$bSchlüsseltechnologien$$kP42$$lGrundlagen für zukünftige Informationstechnologien (FIT)$$vGrundlagen für zukünftige Informationstechnologien$$x0
000021115 9132_ $$0G:(DE-HGF)POF3-529H$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vAddenda$$x0
000021115 9141_ $$y2012
000021115 915__ $$0StatID:(DE-HGF)0010$$2StatID$$aJCR/ISI refereed
000021115 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR
000021115 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000021115 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000021115 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000021115 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000021115 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000021115 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000021115 915__ $$0StatID:(DE-HGF)0400$$2StatID$$aAllianz-Lizenz / DFG
000021115 915__ $$0StatID:(DE-HGF)0420$$2StatID$$aNationallizenz
000021115 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
000021115 915__ $$0StatID:(DE-HGF)0520$$2StatID$$aAllianz-OA
000021115 915__ $$0StatID:(DE-HGF)1020$$2StatID$$aDBCoverage$$bCurrent Contents - Social and Behavioral Sciences
000021115 9201_ $$0I:(DE-82)080009_20140620$$gJARA$$kJARA-FIT$$lJülich-Aachen Research Alliance - Fundamentals of Future Information Technology$$x1
000021115 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$gPGI$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000021115 9201_ $$0I:(DE-Juel1)PGI-5-20110106$$gPGI$$kPGI-5$$lMikrostrukturforschung$$x2
000021115 970__ $$aVDB:(DE-Juel1)136949
000021115 9801_ $$aFullTexts
000021115 980__ $$aVDB
000021115 980__ $$aConvertedRecord
000021115 980__ $$ajournal
000021115 980__ $$aI:(DE-82)080009_20140620
000021115 980__ $$aI:(DE-Juel1)PGI-9-20110106
000021115 980__ $$aI:(DE-Juel1)PGI-5-20110106
000021115 980__ $$aUNRESTRICTED
000021115 980__ $$aJUWEL
000021115 980__ $$aFullTexts
000021115 981__ $$aI:(DE-Juel1)ER-C-1-20170209
000021115 981__ $$aI:(DE-Juel1)PGI-9-20110106
000021115 981__ $$aI:(DE-Juel1)PGI-5-20110106
000021115 981__ $$aI:(DE-Juel1)VDB881