TY  - JOUR
AU  - Trinkaus, H.
AU  - Buca, D.
AU  - Minamisawa, R.A.
AU  - Holländer, B.
AU  - Luysberg, M.
AU  - Mantl, S.
TI  - Anisotropy of strain relaxation in (100) and (110) Si/SiGe heterostructures
JO  - Journal of applied physics
VL  - 111
SN  - 0021-8979
CY  - Melville, NY
PB  - American Institute of Physics
M1  - PreJuSER-21115
SP  - 014904
PY  - 2012
N1  - Record converted from VDB: 12.11.2012
AB  - Plastic strain relaxation of SiGe layers of different crystal orientations is analytically analyzed and compared with experimental results. First, strain relaxation induced by ion implantation and annealing, considering dislocation loop punching and loop interactions with interfaces/surfaces is discussed. A flexible curved dislocation model is used to determine the relation of critical layer thickness with strain/stress. Specific critical conditions to be fulfilled, at both the start and end of the relaxation, are discussed by introducing a quality parameter for efficient strain relaxation, defined as the ratio of real to ideal critical thickness versus strain/stress. The anisotropy of the resolved shear stress is discussed for (001) and (011) crystal orientations in comparison with the experimentally observed anisotropy of strain relaxation for Si/SiGe heterostructures. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3672447]
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000299127200116
DO  - DOI:10.1063/1.3672447
UR  - https://juser.fz-juelich.de/record/21115
ER  -