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@ARTICLE{Trinkaus:21115,
      author       = {Trinkaus, H. and Buca, D. and Minamisawa, R.A. and
                      Holländer, B. and Luysberg, M. and Mantl, S.},
      title        = {{A}nisotropy of strain relaxation in (100) and (110)
                      {S}i/{S}i{G}e heterostructures},
      journal      = {Journal of applied physics},
      volume       = {111},
      issn         = {0021-8979},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-21115},
      pages        = {014904},
      year         = {2012},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Plastic strain relaxation of SiGe layers of different
                      crystal orientations is analytically analyzed and compared
                      with experimental results. First, strain relaxation induced
                      by ion implantation and annealing, considering dislocation
                      loop punching and loop interactions with interfaces/surfaces
                      is discussed. A flexible curved dislocation model is used to
                      determine the relation of critical layer thickness with
                      strain/stress. Specific critical conditions to be fulfilled,
                      at both the start and end of the relaxation, are discussed
                      by introducing a quality parameter for efficient strain
                      relaxation, defined as the ratio of real to ideal critical
                      thickness versus strain/stress. The anisotropy of the
                      resolved shear stress is discussed for (001) and (011)
                      crystal orientations in comparison with the experimentally
                      observed anisotropy of strain relaxation for Si/SiGe
                      heterostructures. (C) 2012 American Institute of Physics.
                      [doi: 10.1063/1.3672447]},
      keywords     = {J (WoSType)},
      cin          = {JARA-FIT / PGI-9 / PGI-5},
      ddc          = {530},
      cid          = {$I:(DE-82)080009_20140620$ / I:(DE-Juel1)PGI-9-20110106 /
                      I:(DE-Juel1)PGI-5-20110106},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000299127200116},
      doi          = {10.1063/1.3672447},
      url          = {https://juser.fz-juelich.de/record/21115},
}