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@ARTICLE{Nichau:21117,
      author       = {Nichau, A. and Durgun Özben, E. and Schnee, M. and Lopes,
                      J.M.J. and Besmehn, A. and Luysberg, M. and Knoll, L. and
                      Habicht, S. and Mussmann, V. and Luptak, R. and Lenk, St.
                      and Rubio-Zuazo, J. and Castro, G.R. and Buca, D. and Zhao,
                      Q.T. and Schubert, J. and Mantl, S.},
      title        = {{L}a{L}u{O}3 higher-k dielectric integration in {SOI}
                      {MOSFET}s with a gate-first process},
      journal      = {Solid state electronics},
      volume       = {71},
      issn         = {0038-1101},
      address      = {Oxford [u.a.]},
      publisher    = {Pergamon, Elsevier Science},
      reportid     = {PreJuSER-21117},
      pages        = {19 - 24},
      year         = {2012},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {The chemical reactions at the higher-kappa
                      LaLuO3/Ti1Nx/poly-Si gate stack interface.; are in detail
                      investigated. Electrical and structural characterization
                      methods are employed to explore the thermal stability of the
                      gate stack. A Ti-rich TiN metal layer degrades the gate
                      stack performance after high temperature annealing while the
                      gate stack with a near stoichiometric TiN layer is stable
                      during 1000 degrees C, 5s anneals. Based on these results an
                      integration process of TiN/LaLuO3 in a gate-first MOSFET
                      process on SOI is shown. (C) 2011 Elsevier Ltd. All rights
                      reserved.},
      keywords     = {J (WoSType)},
      cin          = {JARA-FIT / PGI-9 / ZCH / PGI-5},
      ddc          = {530},
      cid          = {$I:(DE-82)080009_20140620$ / I:(DE-Juel1)PGI-9-20110106 /
                      I:(DE-Juel1)ZCH-20090406 / I:(DE-Juel1)PGI-5-20110106},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Engineering, Electrical $\&$ Electronic / Physics, Applied
                      / Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000303033800005},
      doi          = {10.1016/j.sse.2011.10.014},
      url          = {https://juser.fz-juelich.de/record/21117},
}