000021121 001__ 21121
000021121 005__ 20180208195403.0
000021121 0247_ $$2DOI$$a10.1149/2.060201jes
000021121 0247_ $$2WOS$$aWOS:000298253200050
000021121 0247_ $$2ISSN$$a0013-4651
000021121 0247_ $$2ISSN$$a0096-4743
000021121 0247_ $$2ISSN$$a0096-4786
000021121 0247_ $$2ISSN$$a1945-7111
000021121 037__ $$aPreJuSER-21121
000021121 041__ $$aeng
000021121 082__ $$a540
000021121 084__ $$2WoS$$aElectrochemistry
000021121 084__ $$2WoS$$aMaterials Science, Coatings & Films
000021121 1001_ $$0P:(DE-Juel1)VDB98556$$aMinamisawa, R.A.$$b0$$uFZJ
000021121 245__ $$ap-Type Ion Implantation in Tensile Si/Compressive Si0.5Ge0.5/Tensile Strained Si Heterostructures
000021121 260__ $$aPennington, NJ$$bElectrochemical Society$$c2012
000021121 300__ $$aH44 - H51
000021121 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
000021121 3367_ $$2DataCite$$aOutput Types/Journal article
000021121 3367_ $$00$$2EndNote$$aJournal Article
000021121 3367_ $$2BibTeX$$aARTICLE
000021121 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000021121 3367_ $$2DRIVER$$aarticle
000021121 440_0 $$03889$$aJournal of the Electrochemical Society$$v159$$x0013-4651$$y1
000021121 500__ $$3POF3_Assignment on 2016-02-29
000021121 500__ $$aThe authors thank Dr. R. Carius and his group (IEK-5, Forschungszentrum Juelich) for the Raman spectroscopy measurements. This work was partially funded by the German Federal Ministry of Education and Research via the MEDEA+ project DECISIF (2T104).
000021121 520__ $$aWe present a systematic study on the formation of p-type doped strained Si / strained SiGe heterostructures by B+, BF2+ and (Si++B+) ion implantation and annealing at moderate temperatures. The aim of this paper is to address the challenge of conserving the elastic strain during dopant activation. The most important result is that efficient doping combined with the conservation of strain and a good crystalline quality can only be obtained for BF2+ implants with 1x10(15) ions/cm(2) and anneals at 650 degrees C. With these parameters, single crystalline layers with negligible strain relaxation and a sheet resistance of 886 Omega/sq were achieved. The implantation of B+ requires higher doses to reach low sheet resistances resulting in low layer quality and higher strain relaxation. Si+ pre-implantation yields the lowest sheet resistances, but on the expense of strain (relaxation values over 60%). Finally, the optimized ion implantation / anneal parameters were applied for strained SiGe quantum-well MOSFETs with GdScO3 high-kappa gate dielectric. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.060201jes]
000021121 536__ $$0G:(DE-Juel1)FUEK412$$2G:(DE-HGF)$$aGrundlagen für zukünftige Informationstechnologien$$cP42$$x0
000021121 588__ $$aDataset connected to Web of Science, Pubmed
000021121 650_7 $$2WoSType$$aJ
000021121 7001_ $$0P:(DE-Juel1)125569$$aBuca, D.$$b1$$uFZJ
000021121 7001_ $$0P:(DE-Juel1)125595$$aHolländer, B.$$b2$$uFZJ
000021121 7001_ $$0P:(DE-HGF)0$$aHartmann, J.M.$$b3
000021121 7001_ $$0P:(DE-HGF)0$$aBourdelle, K.K.$$b4
000021121 7001_ $$0P:(DE-Juel1)VDB4959$$aMantl, S.$$b5$$uFZJ
000021121 773__ $$0PERI:(DE-600)2002179-3$$a10.1149/2.060201jes$$gVol. 159, p. H44 - H51$$pH44 - H51$$q159<H44 - H51$$tJournal of the Electrochemical Society$$v159$$x0013-4651$$y2012
000021121 8567_ $$uhttp://dx.doi.org/10.1149/2.060201jes
000021121 909CO $$ooai:juser.fz-juelich.de:21121$$pVDB
000021121 915__ $$0StatID:(DE-HGF)0010$$2StatID$$aJCR/ISI refereed
000021121 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR
000021121 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000021121 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000021121 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000021121 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000021121 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000021121 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000021121 915__ $$0StatID:(DE-HGF)1050$$2StatID$$aDBCoverage$$bBIOSIS Previews
000021121 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences
000021121 9141_ $$y2012
000021121 9131_ $$0G:(DE-Juel1)FUEK412$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$aDE-HGF$$bSchlüsseltechnologien$$kP42$$lGrundlagen für zukünftige Informationstechnologien (FIT)$$vGrundlagen für zukünftige Informationstechnologien$$x0
000021121 9132_ $$0G:(DE-HGF)POF3-529H$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vAddenda$$x0
000021121 9201_ $$0I:(DE-82)080009_20140620$$gJARA$$kJARA-FIT$$lJülich-Aachen Research Alliance - Fundamentals of Future Information Technology$$x1
000021121 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$gPGI$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000021121 970__ $$aVDB:(DE-Juel1)136954
000021121 980__ $$aVDB
000021121 980__ $$aConvertedRecord
000021121 980__ $$ajournal
000021121 980__ $$aI:(DE-82)080009_20140620
000021121 980__ $$aI:(DE-Juel1)PGI-9-20110106
000021121 980__ $$aUNRESTRICTED
000021121 981__ $$aI:(DE-Juel1)PGI-9-20110106
000021121 981__ $$aI:(DE-Juel1)VDB881