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@ARTICLE{Minamisawa:21121,
      author       = {Minamisawa, R.A. and Buca, D. and Holländer, B. and
                      Hartmann, J.M. and Bourdelle, K.K. and Mantl, S.},
      title        = {p-{T}ype {I}on {I}mplantation in {T}ensile
                      {S}i/{C}ompressive {S}i0.5{G}e0.5/{T}ensile {S}trained {S}i
                      {H}eterostructures},
      journal      = {Journal of the Electrochemical Society},
      volume       = {159},
      issn         = {0013-4651},
      address      = {Pennington, NJ},
      publisher    = {Electrochemical Society},
      reportid     = {PreJuSER-21121},
      pages        = {H44 - H51},
      year         = {2012},
      note         = {The authors thank Dr. R. Carius and his group (IEK-5,
                      Forschungszentrum Juelich) for the Raman spectroscopy
                      measurements. This work was partially funded by the German
                      Federal Ministry of Education and Research via the MEDEA+
                      project DECISIF (2T104).},
      abstract     = {We present a systematic study on the formation of p-type
                      doped strained Si / strained SiGe heterostructures by B+,
                      BF2+ and (Si++B+) ion implantation and annealing at moderate
                      temperatures. The aim of this paper is to address the
                      challenge of conserving the elastic strain during dopant
                      activation. The most important result is that efficient
                      doping combined with the conservation of strain and a good
                      crystalline quality can only be obtained for BF2+ implants
                      with 1x10(15) ions/cm(2) and anneals at 650 degrees C. With
                      these parameters, single crystalline layers with negligible
                      strain relaxation and a sheet resistance of 886 Omega/sq
                      were achieved. The implantation of B+ requires higher doses
                      to reach low sheet resistances resulting in low layer
                      quality and higher strain relaxation. Si+ pre-implantation
                      yields the lowest sheet resistances, but on the expense of
                      strain (relaxation values over $60\%).$ Finally, the
                      optimized ion implantation / anneal parameters were applied
                      for strained SiGe quantum-well MOSFETs with GdScO3
                      high-kappa gate dielectric. (C) 2011 The Electrochemical
                      Society. [DOI: 10.1149/2.060201jes]},
      keywords     = {J (WoSType)},
      cin          = {JARA-FIT / PGI-9},
      ddc          = {540},
      cid          = {$I:(DE-82)080009_20140620$ / I:(DE-Juel1)PGI-9-20110106},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Electrochemistry / Materials Science, Coatings $\&$ Films},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000298253200050},
      doi          = {10.1149/2.060201jes},
      url          = {https://juser.fz-juelich.de/record/21121},
}