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000021126 084__ $$2WoS$$aEngineering, Electrical & Electronic
000021126 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000021126 084__ $$2WoS$$aPhysics, Condensed Matter
000021126 1001_ $$0P:(DE-HGF)0$$aKetteniss, N.$$b0
000021126 245__ $$aPolarization-reduced quaternary InAlGaN/GaN HFET and MISHFET devices
000021126 260__ $$aBristol$$bIOP Publ.$$c2012
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000021126 440_0 $$05469$$aSemiconductor Science and Technology$$v27$$x0268-1242$$y5
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000021126 520__ $$aThe reduction of the polarization charge in a GaN-based single-heterostructure field-effect transistor (HFET) by polarization engineering is proposed as a method for achieving normally off operation. The concept minimizes the dependence of the threshold voltage on the barrier layer thickness. Therefore, thicker gate dielectrics for suppression of gate leakage currents can be applied without a shift in threshold voltage. A polarization-reduced enhancement-mode (E-mode) InAlGaN/GaN HFET is presented and demonstrates the basic working principle. Also an insulated-gate device with only minor shift in threshold voltage compared to the HFET validates the new concept and demonstrates the advantages compared to commonly applied concepts for E-mode operation.
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000021126 7001_ $$0P:(DE-HGF)0$$aAskar, A.$$b1
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000021126 7001_ $$0P:(DE-Juel1)125595$$aHolländer, B.$$b4$$uFZJ
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