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@ARTICLE{Ketteniss:21130,
      author       = {Ketteniss, N. and Behmenburg, H. and Hahn, H. and Noculak,
                      A. and Holländer, B. and Kalisch, H. and Heuken, M. and
                      Vescan, A.},
      title        = {{Q}uanternary {E}nhancement-{M}ode {HFET} {W}ith {I}n
                      {S}itu {S}i{N} {P}assivation},
      journal      = {IEEE Electron Device Letters},
      volume       = {33},
      issn         = {0741-3106},
      address      = {New York, NY},
      publisher    = {IEEE},
      reportid     = {PreJuSER-21130},
      pages        = {519 - 521},
      year         = {2012},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {A lattice-matched InAlGaN/GaN heterostructure with a
                      barrier-layer thickness of 4 nm has been grown and
                      passivated in situ with a 63-nm SiN by metal-organic
                      chemical vapor deposition. Enhancement-mode heterostructure
                      field-effect transistors have been realized by a
                      fluorine-based surface treatment after the local removal of
                      the SiN. The threshold voltage and transconductance were
                      0.65 V and 250 mS/mm, respectively, for a 1-mu m gate-length
                      device. The benefits of an in situ SiN passivation are
                      demonstrated: first, the stabilization of the barrier
                      material and prevention from oxidation and second, the
                      improvement of the device characteristics by reduced source
                      resistance and reduced trapping effects.},
      keywords     = {J (WoSType)},
      cin          = {JARA-FIT / PGI-9},
      ddc          = {620},
      cid          = {$I:(DE-82)080009_20140620$ / I:(DE-Juel1)PGI-9-20110106},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Engineering, Electrical $\&$ Electronic},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000302232900018},
      doi          = {10.1109/LED.2012.2184735},
      url          = {https://juser.fz-juelich.de/record/21130},
}