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@ARTICLE{Melville:21470,
      author       = {Melville, A. and Mairoser, T. and Schmehl, A. and Shai,
                      D.E. and Monkman, E.J. and Harter, J.W. and Heeg, T. and
                      Holländer, B. and Schubert, J. and Shen, K.M. and Mannhart,
                      J. and Schlom, D.G.},
      title        = {{L}utetium-doped {E}u{O} films grown by molecular-beam
                      epitaxy},
      journal      = {Applied physics letters},
      volume       = {100},
      issn         = {0003-6951},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-21470},
      pages        = {222101},
      year         = {2012},
      note         = {The work at Cornell was supported by the AFOSR (Grant No.
                      FA9550-10-1-0123), the NSF MRSEC program by cooperative
                      agreement 1120296, and NSF DMR-0847385, and a Cottrell
                      Scholars Award (20025). The work in Augsburg was supported
                      by the DFG (Grant No. TRR 80) and the EC (oxIDes). AM
                      gratefully acknowledges support from the NSF IGERT program
                      (NSF Award DGE-0654193) and by the IMI Program of the
                      National Science Foundation under Award No. DMR 0843934. EJM
                      acknowledges NSERC for PGS support.},
      abstract     = {The effect of lutetium doping on the structural,
                      electronic, and magnetic properties of epitaxial EuO thin
                      films grown by reactive molecular-beam epitaxy is
                      experimentally investigated. The behavior of Lu-doped EuO is
                      contrasted with doping by lanthanum and gadolinium. All
                      three dopants are found to behave similarly despite
                      differences in electronic configuration and ionic size.
                      Andreev reflection measurements on Lu-doped EuO reveal a
                      spin-polarization of $96\%$ in the conduction band, despite
                      non-magnetic carriers introduced by $5\%$ lutetium doping.
                      (C) 2012 American Institute of Physics.
                      [http://dx.doi.org/10.1063/1.4723570]},
      keywords     = {J (WoSType)},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000304823800017},
      doi          = {10.1063/1.4723570},
      url          = {https://juser.fz-juelich.de/record/21470},
}