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@ARTICLE{Aabdin:21698,
      author       = {Aabdin, Z. and Peranio, N. and Winkler, M. and Bessas, D.
                      and König, J. and Hermann, R. and Böttner, H. and Eibl,
                      O.},
      title        = {{S}b2{T}e3 and {B}i2{T}e3 {T}hin {F}ilms {G}rown by
                      {R}oom-{T}emperature {MBE}},
      journal      = {Journal of electronic materials},
      volume       = {41},
      issn         = {0361-5235},
      address      = {Warrendale, Pa},
      publisher    = {TMS},
      reportid     = {PreJuSER-21698},
      pages        = {1493 - 1497},
      year         = {2012},
      note         = {The authors gratefully acknowledge financial support by the
                      German Research Society DFG, priority programme 1386
                      "Nanostructured Thermoelectric Materials: Theory, Model
                      Systems and Controlled Synthesis." R. P. H. and D. B.
                      acknowledge the Advanced Photon Source for provision of
                      synchrotron radiation beam time and the help of Dr. D.
                      Robinson during data acquisition at 6-ID-D. R. P. H.
                      acknowledges support from the Helmholtz-University Young
                      Investigator Group "Lattice Dynamics in Emerging Functional
                      Materials."},
      abstract     = {Sb2Te3 and Bi2Te3 thin films were grown on SiO2 and BaF2
                      substrates at room temperature using molecular beam epitaxy.
                      Metallic layers with thicknesses of 0.2 nm were alternately
                      deposited at room temperature, and the films were
                      subsequently annealed at 250A degrees C for 2 h. x-Ray
                      diffraction and energy-filtered transmission electron
                      microscopy (TEM) combined with high-accuracy
                      energy-dispersive x-ray spectrometry revealed stoichiometric
                      films, grain sizes of less than 500 nm, and a texture.
                      High-quality in-plane thermoelectric properties were
                      obtained for Sb2Te3 films at room temperature, i.e., low
                      charge carrier density (2.6 x 10(19) cm(-3)), large
                      thermopower (130 V K-1), large charge carrier mobility (402
                      cm(2) V-1 s(-1)), and resulting large power factor (29 W
                      cm(-1) K-2). Bi2Te3 films also showed low charge carrier
                      density (2.7 x 10(19) cm(-3)), moderate thermopower (-153 V
                      K-1), but very low charge carrier mobility (80 cm(2) V-1
                      s(-1)), yielding low power factor (8 W cm(-1) K-2). The low
                      mobilities were attributed to Bi-rich grain boundary phases
                      identified by analytical energy-filtered TEM.},
      keywords     = {J (WoSType)},
      cin          = {PGI-4 / JCNS-2 / JARA-FIT},
      ddc          = {670},
      cid          = {I:(DE-Juel1)PGI-4-20110106 / I:(DE-Juel1)JCNS-2-20110106 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien
                      (FUEK412) / 544 - In-house Research with PNI (POF2-544)},
      pid          = {G:(DE-Juel1)FUEK412 / G:(DE-HGF)POF2-544},
      shelfmark    = {Engineering, Electrical $\&$ Electronic / Materials
                      Science, Multidisciplinary / Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000304205100086},
      doi          = {10.1007/s11664-011-1870-z},
      url          = {https://juser.fz-juelich.de/record/21698},
}