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| 001 | 21698 | ||
| 005 | 20240529111628.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1007/s11664-011-1870-z |
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| 084 | _ | _ | |2 WoS |a Engineering, Electrical & Electronic |
| 084 | _ | _ | |2 WoS |a Materials Science, Multidisciplinary |
| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 100 | 1 | _ | |0 P:(DE-HGF)0 |a Aabdin, Z. |b 0 |
| 245 | _ | _ | |a Sb2Te3 and Bi2Te3 Thin Films Grown by Room-Temperature MBE |
| 260 | _ | _ | |a Warrendale, Pa |b TMS |c 2012 |
| 300 | _ | _ | |a 1493 - 1497 |
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| 440 | _ | 0 | |0 3269 |a Journal of Electronic Materials |v 41 |x 0361-5235 |y 6 |
| 500 | _ | _ | |a The authors gratefully acknowledge financial support by the German Research Society DFG, priority programme 1386 "Nanostructured Thermoelectric Materials: Theory, Model Systems and Controlled Synthesis." R. P. H. and D. B. acknowledge the Advanced Photon Source for provision of synchrotron radiation beam time and the help of Dr. D. Robinson during data acquisition at 6-ID-D. R. P. H. acknowledges support from the Helmholtz-University Young Investigator Group "Lattice Dynamics in Emerging Functional Materials." |
| 520 | _ | _ | |a Sb2Te3 and Bi2Te3 thin films were grown on SiO2 and BaF2 substrates at room temperature using molecular beam epitaxy. Metallic layers with thicknesses of 0.2 nm were alternately deposited at room temperature, and the films were subsequently annealed at 250A degrees C for 2 h. x-Ray diffraction and energy-filtered transmission electron microscopy (TEM) combined with high-accuracy energy-dispersive x-ray spectrometry revealed stoichiometric films, grain sizes of less than 500 nm, and a texture. High-quality in-plane thermoelectric properties were obtained for Sb2Te3 films at room temperature, i.e., low charge carrier density (2.6 x 10(19) cm(-3)), large thermopower (130 V K-1), large charge carrier mobility (402 cm(2) V-1 s(-1)), and resulting large power factor (29 W cm(-1) K-2). Bi2Te3 films also showed low charge carrier density (2.7 x 10(19) cm(-3)), moderate thermopower (-153 V K-1), but very low charge carrier mobility (80 cm(2) V-1 s(-1)), yielding low power factor (8 W cm(-1) K-2). The low mobilities were attributed to Bi-rich grain boundary phases identified by analytical energy-filtered TEM. |
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| 653 | 2 | 0 | |2 Author |a Thermoelectric effects |
| 653 | 2 | 0 | |2 Author |a thin films |
| 653 | 2 | 0 | |2 Author |a molecular beam epitaxy (MBE) |
| 653 | 2 | 0 | |2 Author |a x-ray diffraction (XRD) |
| 653 | 2 | 0 | |2 Author |a analytical transmission electron microscopy (TEM) |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Peranio, N. |b 1 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Winkler, M. |b 2 |
| 700 | 1 | _ | |0 P:(DE-Juel1)VDB90858 |a Bessas, D. |b 3 |u FZJ |
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| 773 | _ | _ | |0 PERI:(DE-600)2032868-0 |a 10.1007/s11664-011-1870-z |g Vol. 41, p. 1493 - 1497 |p 1493 - 1497 |q 41<1493 - 1497 |t Journal of electronic materials |v 41 |x 0361-5235 |y 2012 |
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