%0 Journal Article
%A Fan, X.F.
%A Zheng, W.T.
%A Chihaia, V.
%A Shen, Z.X.
%A Kuo, J.-L.
%T Interaction between graphene and the surface of SiO2
%J Journal of physics / Condensed matter
%V 24
%@ 0953-8984
%C Bristol
%I IOP Publ.
%M PreJuSER-21704
%P 305004
%D 2012
%Z Record converted from VDB: 12.11.2012
%X The interaction between graphene and a SiO(2) surface has been analyzed with first-principles DFT calculations by constructing the different configurations based on α-quartz and cristobalite structures. The fact that single-layer graphene can stay stably on a SiO(2) surface is explained based on a general consideration of the configuration structures of the SiO(2) surface. It is found that the oxygen defect in a SiO(2) surface can shift the Fermi level of graphene down which opens up the mechanism of the hole-doping effect of graphene adsorbed on a SiO(2) surface observed in a lot of experiments.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%$ pmid:22713875
%U <Go to ISI:>//WOS:000306405600004
%R 10.1088/0953-8984/24/30/305004
%U https://juser.fz-juelich.de/record/21704