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000021704 084__ $$2WoS$$aPhysics, Condensed Matter
000021704 1001_ $$0P:(DE-HGF)0$$aFan, X.F.$$b0
000021704 245__ $$aInteraction between graphene and the surface of SiO2
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000021704 520__ $$aThe interaction between graphene and a SiO(2) surface has been analyzed with first-principles DFT calculations by constructing the different configurations based on α-quartz and cristobalite structures. The fact that single-layer graphene can stay stably on a SiO(2) surface is explained based on a general consideration of the configuration structures of the SiO(2) surface. It is found that the oxygen defect in a SiO(2) surface can shift the Fermi level of graphene down which opens up the mechanism of the hole-doping effect of graphene adsorbed on a SiO(2) surface observed in a lot of experiments.
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000021704 7001_ $$0P:(DE-HGF)0$$aZheng, W.T.$$b1
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000021704 7001_ $$0P:(DE-HGF)0$$aShen, Z.X.$$b3
000021704 7001_ $$0P:(DE-HGF)0$$aKuo, J.-L.$$b4
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000021704 8567_ $$uhttp://dx.doi.org/10.1088/0953-8984/24/30/305004
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