TY  - JOUR
AU  - Fan, X.F.
AU  - Zheng, W.T.
AU  - Chihaia, V.
AU  - Shen, Z.X.
AU  - Kuo, J.-L.
TI  - Interaction between graphene and the surface of SiO2
JO  - Journal of physics / Condensed matter
VL  - 24
SN  - 0953-8984
CY  - Bristol
PB  - IOP Publ.
M1  - PreJuSER-21704
SP  - 305004
PY  - 2012
N1  - Record converted from VDB: 12.11.2012
AB  - The interaction between graphene and a SiO(2) surface has been analyzed with first-principles DFT calculations by constructing the different configurations based on α-quartz and cristobalite structures. The fact that single-layer graphene can stay stably on a SiO(2) surface is explained based on a general consideration of the configuration structures of the SiO(2) surface. It is found that the oxygen defect in a SiO(2) surface can shift the Fermi level of graphene down which opens up the mechanism of the hole-doping effect of graphene adsorbed on a SiO(2) surface observed in a lot of experiments.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
C6  - pmid:22713875
UR  - <Go to ISI:>//WOS:000306405600004
DO  - DOI:10.1088/0953-8984/24/30/305004
UR  - https://juser.fz-juelich.de/record/21704
ER  -