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| Hauptseite > Publikationsdatenbank > Interaction between graphene and the surface of SiO2 > print |
| 001 | 21704 | ||
| 005 | 20210129210806.0 | ||
| 024 | 7 | _ | |a pmid:22713875 |2 pmid |
| 024 | 7 | _ | |a 10.1088/0953-8984/24/30/305004 |2 DOI |
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| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 530 |
| 084 | _ | _ | |2 WoS |a Physics, Condensed Matter |
| 100 | 1 | _ | |a Fan, X.F. |b 0 |0 P:(DE-HGF)0 |
| 245 | _ | _ | |a Interaction between graphene and the surface of SiO2 |
| 260 | _ | _ | |a Bristol |b IOP Publ. |c 2012 |
| 300 | _ | _ | |a 305004 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
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| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Journal of Physics: Condensed Matter |x 0953-8984 |0 3703 |y 30 |v 24 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a The interaction between graphene and a SiO(2) surface has been analyzed with first-principles DFT calculations by constructing the different configurations based on α-quartz and cristobalite structures. The fact that single-layer graphene can stay stably on a SiO(2) surface is explained based on a general consideration of the configuration structures of the SiO(2) surface. It is found that the oxygen defect in a SiO(2) surface can shift the Fermi level of graphene down which opens up the mechanism of the hole-doping effect of graphene adsorbed on a SiO(2) surface observed in a lot of experiments. |
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| 700 | 1 | _ | |a Zheng, W.T. |b 1 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Chihaia, V. |b 2 |u FZJ |0 P:(DE-Juel1)144509 |
| 700 | 1 | _ | |a Shen, Z.X. |b 3 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Kuo, J.-L. |b 4 |0 P:(DE-HGF)0 |
| 773 | _ | _ | |a 10.1088/0953-8984/24/30/305004 |g Vol. 24, p. 305004 |p 305004 |q 24<305004 |0 PERI:(DE-600)1472968-4 |t Journal of physics / Condensed matter |v 24 |y 2012 |x 0953-8984 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1088/0953-8984/24/30/305004 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/21704/files/1107.3001.pdf |y OpenAccess |
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