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@ARTICLE{Dittmann:21907,
      author       = {Dittmann, R. and Münstermann, R. and Krug, I. and Park, D.
                      and Menke, T. and Mayer, J. and Besmehn, A. and Kronast, F.
                      and Schneider, C.M. and Waser, R.},
      title        = {{S}caling {P}otential of {L}ocal {R}edox {P}rocesses in
                      {M}emristive {S}r{T}i{O} $_{3}$ {T}hin-{F}ilm {D}evices},
      journal      = {Proceedings of the IEEE},
      volume       = {100},
      issn         = {0018-9219},
      address      = {New York, NY [u.a.]},
      publisher    = {Inst.},
      reportid     = {PreJuSER-21907},
      pages        = {1979 - 1990},
      year         = {2012},
      note         = {Manuscript received September 15, 2010; revised September
                      7, 2011; accepted February 7, 2012. Date of publication
                      April 24, 2012; date of current version May 10, 2012. This
                      work was supported in part by the Deutsche
                      Forschungsgemeinschaft (SFB 917).},
      abstract     = {In this work, we address the following question: Where do
                      the resistive switching processes take place in memristive
                      thin-film devices of the single crystalline model material
                      Fe-doped SrTiO3? We compare resistive switching induced by
                      the tip of the atomic force microscope on the bare thin-film
                      surface with the switching properties observed in memristive
                      devices with Pt top electrode. In order to close the gap
                      between these two approaches, we combine conductive-tip
                      atomic force microscopy with a delamination technique to
                      remove the top electrode of Fe-doped SrTiO3
                      metal-insulator-metal (MIM) structures to gain insight into
                      the active switching interface with nanoscale lateral
                      resolution. This enables us to prove the coexistence of a
                      filamentary and area-dependent switching process with
                      opposite switching polarities in the same sample. The
                      spatially resolved analysis by transmission electron
                      microscopy and photoelectron spectromicroscopy gives us some
                      hints that the two switching types take place in device
                      regions with different defect density and significant
                      stoichiometry difference.},
      keywords     = {J (WoSType)},
      cin          = {JARA-FIT / PGI-7 / PGI-6 / ZCH},
      ddc          = {620},
      cid          = {$I:(DE-82)080009_20140620$ / I:(DE-Juel1)PGI-7-20110106 /
                      I:(DE-Juel1)PGI-6-20110106 / I:(DE-Juel1)ZCH-20090406},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Engineering, Electrical $\&$ Electronic},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000309840600008},
      doi          = {10.1109/JPROC.2012.2188771},
      url          = {https://juser.fz-juelich.de/record/21907},
}