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@INPROCEEDINGS{Waser:21952,
      author       = {Waser, R. and Bruchhaus, R. and Menzel, S.},
      title        = {{R}edox-based resistive switching memories},
      reportid     = {PreJuSER-21952},
      year         = {2012},
      note         = {Record converted from VDB: 12.11.2012},
      comment      = {Nanoelectronics and Information Technology, ed.: / R.
                      Waser, Wiley-VCH, 2012. - S. 685},
      booktitle     = {Nanoelectronics and Information
                       Technology, ed.: / R. Waser, Wiley-VCH,
                       2012. - S. 685},
      cin          = {PGI-7 / JARA-FIT / JCNS (München) ; Jülich Centre for
                      Neutron Science JCNS (München) ; JCNS-FRM-II},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)JCNS-FRM-II-20110218},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      typ          = {PUB:(DE-HGF)8 / PUB:(DE-HGF)7},
      url          = {https://juser.fz-juelich.de/record/21952},
}