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000021958 0247_ $$2DOI$$a10.1007/s00339-011-6287-2
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000021958 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000021958 084__ $$2WoS$$aPhysics, Applied
000021958 1001_ $$0P:(DE-Juel1)VDB15125$$aKügeler, C.$$b0$$uFZJ
000021958 245__ $$aMaterials, technologies, and circuit concepts for nanocrossbar-based bipolar RRAM
000021958 260__ $$aBerlin$$bSpringer$$c2011
000021958 300__ $$aS1 791 - 809
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000021958 440_0 $$0560$$aApplied Physics A$$v102$$x0947-8396$$y4
000021958 500__ $$3POF3_Assignment on 2016-02-29
000021958 500__ $$aFor their valuable contributions and fruitful discussions, the authors would like to thank C. Nauenheim, M. Meier, F. Lentz, S. Trellenkamp, J. Zhang, L. Yi, C. Schindler, R. Soni, L. Yang and S. Hoffmann-Eifert. The major part of this work was supported by the "Helmholtz Association of German Research Centres" within the framework of the additional funding project "Nanoarchitecture Lab".
000021958 520__ $$aThe paper reports on the characterization of bipolar resistive switching materials and their integration into nanocrossbar structures, as well as on different memory operation schemes in terms of memory density and the challenging problem of sneak paths. TiO2, WO3, GeSe, SiO2 and MSQ thin films were integrated into nanojunctions of 100x100 nm(2). The variation between inert Pt and Cu or Ag top electrodes leads to valence change (VCM) switching or electrochemical metallization (ECM) switching and has significant impact on the resistive properties. All materials showed promising characteristics with switching speeds down to 10 ns, multilevel switching, good endurance and retention. Nanoimprint lithography was found to be a suitable tool for processing crossbar arrays down to a feature size of 50 nm and 3D stacking was demonstrated. The inherent occurrence of current sneak paths in passive crossbar arrays can be circumvented by the implementation of complementary resistive switching (CRS) cells. The comparison with other operation schemes shows that the CRS concept dramatically increases the addressable memory size to about 10(10) bit.
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000021958 7001_ $$0P:(DE-Juel1)VDB75720$$aRosezin, R.$$b1$$uFZJ
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000021958 7001_ $$0P:(DE-Juel1)130570$$aBruchhaus, R.$$b3$$uFZJ
000021958 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b4$$uFZJ
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000021958 8567_ $$uhttp://dx.doi.org/10.1007/s00339-011-6287-2
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