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@ARTICLE{Kgeler:21958,
      author       = {Kügeler, C. and Rosezin, R. and Linn, E. and Bruchhaus, R.
                      and Waser, R.},
      title        = {{M}aterials, technologies, and circuit concepts for
                      nanocrossbar-based bipolar {RRAM}},
      journal      = {Applied physics / A},
      volume       = {102},
      issn         = {0947-8396},
      address      = {Berlin},
      publisher    = {Springer},
      reportid     = {PreJuSER-21958},
      pages        = {S1 791 - 809},
      year         = {2011},
      note         = {For their valuable contributions and fruitful discussions,
                      the authors would like to thank C. Nauenheim, M. Meier, F.
                      Lentz, S. Trellenkamp, J. Zhang, L. Yi, C. Schindler, R.
                      Soni, L. Yang and S. Hoffmann-Eifert. The major part of this
                      work was supported by the "Helmholtz Association of German
                      Research Centres" within the framework of the additional
                      funding project "Nanoarchitecture Lab".},
      abstract     = {The paper reports on the characterization of bipolar
                      resistive switching materials and their integration into
                      nanocrossbar structures, as well as on different memory
                      operation schemes in terms of memory density and the
                      challenging problem of sneak paths. TiO2, WO3, GeSe, SiO2
                      and MSQ thin films were integrated into nanojunctions of
                      100x100 nm(2). The variation between inert Pt and Cu or Ag
                      top electrodes leads to valence change (VCM) switching or
                      electrochemical metallization (ECM) switching and has
                      significant impact on the resistive properties. All
                      materials showed promising characteristics with switching
                      speeds down to 10 ns, multilevel switching, good endurance
                      and retention. Nanoimprint lithography was found to be a
                      suitable tool for processing crossbar arrays down to a
                      feature size of 50 nm and 3D stacking was demonstrated. The
                      inherent occurrence of current sneak paths in passive
                      crossbar arrays can be circumvented by the implementation of
                      complementary resistive switching (CRS) cells. The
                      comparison with other operation schemes shows that the CRS
                      concept dramatically increases the addressable memory size
                      to about 10(10) bit.},
      keywords     = {J (WoSType)},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Materials Science, Multidisciplinary / Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000288253600003},
      doi          = {10.1007/s00339-011-6287-2},
      url          = {https://juser.fz-juelich.de/record/21958},
}