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000022191 1001_ $$0P:(DE-Juel1)VDB64323$$aGareev, R.R.$$b0$$uFZJ
000022191 245__ $$aAntiferromagnetic coupling  across silicon regulated by tunneling currents
000022191 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2012
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000022191 440_0 $$0562$$aApplied Physics Letters$$v100$$x0003-6951$$y2
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000022191 500__ $$aThis work is supported by the Project DFG 9209379.
000022191 520__ $$aWe report on the enhancement of antiferromagnetic coupling in epitaxial Fe/Si/Fe structures by voltage-driven spin-polarized tunneling currents. Using the ballistic electron magnetic microscopy, we established that the hot-electron collector current reflects magnetization alignment and the magnetocurrent exceeds 200% at room temperature. The saturation magnetic field for the collector current corresponding to the parallel alignment of magnetizations rises up with the tunneling current, thus demonstrating stabilization of the antiparallel alignment and increasing antiferromagnetic coupling. We connect the enhancement of antiferromagnetic coupling with local dynamic spin torques mediated by spin-polarized tunneling electrons. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3675872]
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000022191 7001_ $$0P:(DE-Juel1)VDB5559$$aSchmid, M.$$b1$$uFZJ
000022191 7001_ $$0P:(DE-Juel1)VDB107762$$aVancea, J.$$b2$$uFZJ
000022191 7001_ $$0P:(DE-Juel1)VDB107763$$aBack, C.H.$$b3$$uFZJ
000022191 7001_ $$0P:(DE-Juel1)VDB1468$$aSchreiber, R.$$b4$$uFZJ
000022191 7001_ $$0P:(DE-Juel1)130582$$aBürgler, D.$$b5$$uFZJ
000022191 7001_ $$0P:(DE-Juel1)130948$$aSchneider, C.M.$$b6$$uFZJ
000022191 7001_ $$0P:(DE-Juel1)VDB107764$$aStromberg, F.$$b7$$uFZJ
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000022191 8567_ $$uhttp://dx.doi.org/10.1063/1.3675872
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