TY  - JOUR
AU  - Gareev, R.R.
AU  - Schmid, M.
AU  - Vancea, J.
AU  - Back, C.H.
AU  - Schreiber, R.
AU  - Bürgler, D.
AU  - Schneider, C.M.
AU  - Stromberg, F.
AU  - Wende, H.
TI  - Antiferromagnetic coupling  across silicon regulated by tunneling currents
JO  - Applied physics letters
VL  - 100
SN  - 0003-6951
CY  - Melville, NY
PB  - American Institute of Physics
M1  - PreJuSER-22191
SP  - 022406
PY  - 2012
N1  - This work is supported by the Project DFG 9209379.
AB  - We report on the enhancement of antiferromagnetic coupling in epitaxial Fe/Si/Fe structures by voltage-driven spin-polarized tunneling currents. Using the ballistic electron magnetic microscopy, we established that the hot-electron collector current reflects magnetization alignment and the magnetocurrent exceeds 200% at room temperature. The saturation magnetic field for the collector current corresponding to the parallel alignment of magnetizations rises up with the tunneling current, thus demonstrating stabilization of the antiparallel alignment and increasing antiferromagnetic coupling. We connect the enhancement of antiferromagnetic coupling with local dynamic spin torques mediated by spin-polarized tunneling electrons. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3675872]
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000299126800044
DO  - DOI:10.1063/1.3675872
UR  - https://juser.fz-juelich.de/record/22191
ER  -