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@ARTICLE{Gareev:22191,
      author       = {Gareev, R.R. and Schmid, M. and Vancea, J. and Back, C.H.
                      and Schreiber, R. and Bürgler, D. and Schneider, C.M. and
                      Stromberg, F. and Wende, H.},
      title        = {{A}ntiferromagnetic coupling across silicon regulated by
                      tunneling currents},
      journal      = {Applied physics letters},
      volume       = {100},
      issn         = {0003-6951},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-22191},
      pages        = {022406},
      year         = {2012},
      note         = {This work is supported by the Project DFG 9209379.},
      abstract     = {We report on the enhancement of antiferromagnetic coupling
                      in epitaxial Fe/Si/Fe structures by voltage-driven
                      spin-polarized tunneling currents. Using the ballistic
                      electron magnetic microscopy, we established that the
                      hot-electron collector current reflects magnetization
                      alignment and the magnetocurrent exceeds $200\%$ at room
                      temperature. The saturation magnetic field for the collector
                      current corresponding to the parallel alignment of
                      magnetizations rises up with the tunneling current, thus
                      demonstrating stabilization of the antiparallel alignment
                      and increasing antiferromagnetic coupling. We connect the
                      enhancement of antiferromagnetic coupling with local dynamic
                      spin torques mediated by spin-polarized tunneling electrons.
                      (C) 2012 American Institute of Physics. [doi:
                      10.1063/1.3675872]},
      keywords     = {J (WoSType)},
      cin          = {PGI-6},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-6-20110106},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000299126800044},
      doi          = {10.1063/1.3675872},
      url          = {https://juser.fz-juelich.de/record/22191},
}