001     22191
005     20180209102311.0
024 7 _ |2 DOI
|a 10.1063/1.3675872
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082 _ _ |a 530
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|a Physics, Applied
100 1 _ |0 P:(DE-Juel1)VDB64323
|a Gareev, R.R.
|b 0
|u FZJ
245 _ _ |a Antiferromagnetic coupling across silicon regulated by tunneling currents
260 _ _ |a Melville, NY
|b American Institute of Physics
|c 2012
300 _ _ |a 022406
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|a Applied Physics Letters
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500 _ _ |3 POF3_Assignment on 2016-02-29
500 _ _ |a This work is supported by the Project DFG 9209379.
520 _ _ |a We report on the enhancement of antiferromagnetic coupling in epitaxial Fe/Si/Fe structures by voltage-driven spin-polarized tunneling currents. Using the ballistic electron magnetic microscopy, we established that the hot-electron collector current reflects magnetization alignment and the magnetocurrent exceeds 200% at room temperature. The saturation magnetic field for the collector current corresponding to the parallel alignment of magnetizations rises up with the tunneling current, thus demonstrating stabilization of the antiparallel alignment and increasing antiferromagnetic coupling. We connect the enhancement of antiferromagnetic coupling with local dynamic spin torques mediated by spin-polarized tunneling electrons. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3675872]
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|g Vol. 100, p. 022406
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856 7 _ |u http://dx.doi.org/10.1063/1.3675872
856 4 _ |u https://juser.fz-juelich.de/record/22191/files/FZJ-22191.pdf
|y Published under German "Allianz" Licensing conditions on 2012-01-10. Available in OpenAccess from 2012-01-10
|z Published final document.
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