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@ARTICLE{Mikulics:22688,
      author       = {Mikulics, M. and Zhang, J. and Serafini, J. and Adam, R.
                      and Grützmacher, D. and Sobolewski, R.},
      title        = {{S}ubpicosecond electronhole recombination time and
                      terahertz-bandwidth photoresponse in freestanding {G}a{A}s
                      epitaxial mesoscopic structures},
      journal      = {Applied physics letters},
      volume       = {101},
      issn         = {0003-6951},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-22688},
      pages        = {031111},
      year         = {2012},
      note         = {The authors thank P. Song and M. Samuels for their
                      assistance in some experiments. This work was supported in
                      part by NSF Grant No. ECCS-0901701 (Rochester). J.Z. and
                      J.S. acknowledge support from the Frank Horton Graduate
                      Fellowship Program at the University of Rochester's
                      Laboratory for Laser Energetics, funded by the U.S.
                      Department of Energy Office of Inertial Confinement Fusion
                      under Cooperative Agreement No. DE-FC52-08NA28302 and the
                      New York State Energy Research and Development Authority.
                      The support of NSF and DOE does not constitute their
                      endorsement of the views expressed in this article.},
      abstract     = {We present the ultrafast (THz-bandwidth) photoresponse from
                      GaAs single-crystal mesoscopic structures, such as
                      freestanding whiskers and platelets fabricated by the
                      top-down technique, transferred onto a substrate of choice,
                      and incorporated into a coplanar strip line. We recorded
                      electrical transients as short as similar to 600 fs from an
                      individual whisker photodetector. Analysis of the frequency
                      spectrum of the photoresponse electrical signal showed that,
                      intrinsically, our device was characterized by an similar to
                      150-fs carrier lifetime and an overall 320-fs response. The
                      corresponding 3-dB frequency bandwidth was 1.3 THz-the
                      highest bandwidth ever reported for a GaAs-based
                      photodetector. Simultaneously, as high-quality, epitaxially
                      grown crystals, our GaAs structures exhibited mobility
                      values as high as similar to 7300 cm(2)/V.s, extremely low
                      dark currents, and similar to $7\%$ intrinsic detection
                      efficiency, which, together with their experimentally
                      measured photoresponse repetition time of similar to 1 ps,
                      makes them uniquely suitable for terahertz-frequency
                      optoelectronic applications, ranging from ultrafast photon
                      detectors and counters to THz-bandwidth
                      optical-to-electrical transducers and photomixers. (C) 2012
                      American Institute of Physics.
                      [http://dx.doi.org/10.1063/1.4737442]},
      keywords     = {J (WoSType)},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000306748000011},
      doi          = {10.1063/1.4737442},
      url          = {https://juser.fz-juelich.de/record/22688},
}