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@ARTICLE{Mikulics:22688,
author = {Mikulics, M. and Zhang, J. and Serafini, J. and Adam, R.
and Grützmacher, D. and Sobolewski, R.},
title = {{S}ubpicosecond electronhole recombination time and
terahertz-bandwidth photoresponse in freestanding {G}a{A}s
epitaxial mesoscopic structures},
journal = {Applied physics letters},
volume = {101},
issn = {0003-6951},
address = {Melville, NY},
publisher = {American Institute of Physics},
reportid = {PreJuSER-22688},
pages = {031111},
year = {2012},
note = {The authors thank P. Song and M. Samuels for their
assistance in some experiments. This work was supported in
part by NSF Grant No. ECCS-0901701 (Rochester). J.Z. and
J.S. acknowledge support from the Frank Horton Graduate
Fellowship Program at the University of Rochester's
Laboratory for Laser Energetics, funded by the U.S.
Department of Energy Office of Inertial Confinement Fusion
under Cooperative Agreement No. DE-FC52-08NA28302 and the
New York State Energy Research and Development Authority.
The support of NSF and DOE does not constitute their
endorsement of the views expressed in this article.},
abstract = {We present the ultrafast (THz-bandwidth) photoresponse from
GaAs single-crystal mesoscopic structures, such as
freestanding whiskers and platelets fabricated by the
top-down technique, transferred onto a substrate of choice,
and incorporated into a coplanar strip line. We recorded
electrical transients as short as similar to 600 fs from an
individual whisker photodetector. Analysis of the frequency
spectrum of the photoresponse electrical signal showed that,
intrinsically, our device was characterized by an similar to
150-fs carrier lifetime and an overall 320-fs response. The
corresponding 3-dB frequency bandwidth was 1.3 THz-the
highest bandwidth ever reported for a GaAs-based
photodetector. Simultaneously, as high-quality, epitaxially
grown crystals, our GaAs structures exhibited mobility
values as high as similar to 7300 cm(2)/V.s, extremely low
dark currents, and similar to $7\%$ intrinsic detection
efficiency, which, together with their experimentally
measured photoresponse repetition time of similar to 1 ps,
makes them uniquely suitable for terahertz-frequency
optoelectronic applications, ranging from ultrafast photon
detectors and counters to THz-bandwidth
optical-to-electrical transducers and photomixers. (C) 2012
American Institute of Physics.
[http://dx.doi.org/10.1063/1.4737442]},
keywords = {J (WoSType)},
cin = {PGI-9 / JARA-FIT},
ddc = {530},
cid = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
pnm = {Grundlagen für zukünftige Informationstechnologien},
pid = {G:(DE-Juel1)FUEK412},
shelfmark = {Physics, Applied},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000306748000011},
doi = {10.1063/1.4737442},
url = {https://juser.fz-juelich.de/record/22688},
}