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@ARTICLE{Kordos:22696,
      author       = {Kordos, P. and Kúdela, R. and Stoklas, R. and Cico, K. and
                      Mikulics, M. and Gregusová, D. and Novák, J.},
      title        = {{A}luminum oxide as passivation and gate insulator in
                      {G}a{A}s-based field-effect transistors prepared in situ by
                      metal-organic vapor deposition},
      journal      = {Applied physics letters},
      volume       = {100},
      issn         = {0003-6951},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-22696},
      pages        = {142113},
      year         = {2012},
      note         = {The work reported here has been supported by the Slovak
                      Scientific Grant Agency VEGA (2/0098/09 and 1/0866/11) and
                      the Slovak Research and Development Agency APVV
                      (LPP-0162-09).},
      abstract     = {Application of GaAs-based metal-oxide-semiconductor (MOS)
                      structures, as a "high carrier mobility" alternative to
                      conventional Si MOS transistors, is still hindered due to
                      difficulties in their preparation with low surface/interface
                      defect states. Here, aluminum oxide as a passivation and
                      gate insulator was formed by room temperature oxidation of a
                      thin Al layer prepared in situ by metal-organic chemical
                      vapor deposition. The GaAs-based MOS structures yielded
                      two-times higher sheet charge density and saturation drain
                      current, i.e., up to 4 x 10 12 cm(-2) and 480 mA/mm,
                      respectively, than the counterparts without an oxide surface
                      layer. The highest electron mobility in transistor channel
                      was found to be 6050 cm(2)/V s. Capacitance measurements,
                      performed in the range from 1 kHz to 1 MHz, showed their
                      negligible frequency dispersion. All these results indicate
                      an efficient suppression of the defect states by in situ
                      preparation of the semiconductor structure and aluminum
                      oxide used as a passivation and gate insulator. (C) 2012
                      American Institute of Physics.
                      [http://dx.doi.org/10.1063/1.3701584]},
      keywords     = {J (WoSType)},
      cin          = {JARA-FIT / PGI-9},
      ddc          = {530},
      cid          = {$I:(DE-82)080009_20140620$ / I:(DE-Juel1)PGI-9-20110106},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000302567800039},
      doi          = {10.1063/1.3701584},
      url          = {https://juser.fz-juelich.de/record/22696},
}