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000023228 084__ $$2WoS$$aPhysics, Applied
000023228 1001_ $$0P:(DE-Juel1)VDB89091$$aGotschke, T.$$b0$$uFZJ
000023228 245__ $$aInfluence of the adatom diffusion on selective growth of GaN nanowire regular arrays
000023228 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2011
000023228 300__ $$a103102
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000023228 440_0 $$0562$$aApplied Physics Letters$$v98$$x0003-6951$$y10
000023228 500__ $$3POF3_Assignment on 2016-02-29
000023228 500__ $$aThe authors wish to thank K. H. Deussen for technical support. We furthermore thank R. Hey for a critical reading of the paper. This work was financially supported by the German Ministry of Education and Research project "EPHQUAM" (01BL0904).
000023228 520__ $$aMolecular beam epitaxy (MBE) on patterned Si/AlN/Si(111) substrates was used to obtain regular arrays of uniform-size GaN nanowires (NWs). The silicon top layer has been patterned with e-beam lithography, resulting in uniform arrays of holes with different diameters (d(h)) and periods (P). While the NW length is almost insensitive to the array parameters, the diameter increases significantly with d(h) and P till it saturates at P values higher than 800 nm. A diffusion induced model was used to explain the experimental results with an effective diffusion length of the adatoms on the Si, estimated to be about 400 nm. (C) 2011 American Institute of Physics. [doi:10.1063/1.3559618]
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000023228 7001_ $$0P:(DE-Juel1)VDB89097$$aSchumann, T.$$b1$$uFZJ
000023228 7001_ $$0P:(DE-Juel1)VDB89090$$aLimbach, F.$$b2$$uFZJ
000023228 7001_ $$0P:(DE-Juel1)VDB5575$$aStoica, T.$$b3$$uFZJ
000023228 7001_ $$0P:(DE-Juel1)VDB12919$$aCalarco, R.$$b4$$uFZJ
000023228 773__ $$0PERI:(DE-600)1469436-0$$a10.1063/1.3559618$$gVol. 98, p. 103102$$p103102$$q98<103102$$tApplied physics letters$$v98$$x0003-6951$$y2011
000023228 8567_ $$uhttp://dx.doi.org/10.1063/1.3559618
000023228 8564_ $$uhttps://juser.fz-juelich.de/record/23228/files/FZJ-23228.pdf$$yPublished under German "Allianz" Licensing conditions on 2011-03-08. Available in OpenAccess from 2011-03-08$$zPublished final document.
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