TY  - JOUR
AU  - Gotschke, T.
AU  - Schumann, T.
AU  - Limbach, F.
AU  - Stoica, T.
AU  - Calarco, R.
TI  - Influence of the adatom diffusion on selective growth of GaN nanowire regular arrays
JO  - Applied physics letters
VL  - 98
SN  - 0003-6951
CY  - Melville, NY
PB  - American Institute of Physics
M1  - PreJuSER-23228
SP  - 103102
PY  - 2011
N1  - The authors wish to thank K. H. Deussen for technical support. We furthermore thank R. Hey for a critical reading of the paper. This work was financially supported by the German Ministry of Education and Research project "EPHQUAM" (01BL0904).
AB  - Molecular beam epitaxy (MBE) on patterned Si/AlN/Si(111) substrates was used to obtain regular arrays of uniform-size GaN nanowires (NWs). The silicon top layer has been patterned with e-beam lithography, resulting in uniform arrays of holes with different diameters (d(h)) and periods (P). While the NW length is almost insensitive to the array parameters, the diameter increases significantly with d(h) and P till it saturates at P values higher than 800 nm. A diffusion induced model was used to explain the experimental results with an effective diffusion length of the adatoms on the Si, estimated to be about 400 nm. (C) 2011 American Institute of Physics. [doi:10.1063/1.3559618]
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000288277200063
DO  - DOI:10.1063/1.3559618
UR  - https://juser.fz-juelich.de/record/23228
ER  -