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@ARTICLE{Gotschke:23228,
      author       = {Gotschke, T. and Schumann, T. and Limbach, F. and Stoica,
                      T. and Calarco, R.},
      title        = {{I}nfluence of the adatom diffusion on selective growth of
                      {G}a{N} nanowire regular arrays},
      journal      = {Applied physics letters},
      volume       = {98},
      issn         = {0003-6951},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-23228},
      pages        = {103102},
      year         = {2011},
      note         = {The authors wish to thank K. H. Deussen for technical
                      support. We furthermore thank R. Hey for a critical reading
                      of the paper. This work was financially supported by the
                      German Ministry of Education and Research project "EPHQUAM"
                      (01BL0904).},
      abstract     = {Molecular beam epitaxy (MBE) on patterned Si/AlN/Si(111)
                      substrates was used to obtain regular arrays of uniform-size
                      GaN nanowires (NWs). The silicon top layer has been
                      patterned with e-beam lithography, resulting in uniform
                      arrays of holes with different diameters (d(h)) and periods
                      (P). While the NW length is almost insensitive to the array
                      parameters, the diameter increases significantly with d(h)
                      and P till it saturates at P values higher than 800 nm. A
                      diffusion induced model was used to explain the experimental
                      results with an effective diffusion length of the adatoms on
                      the Si, estimated to be about 400 nm. (C) 2011 American
                      Institute of Physics. [doi:10.1063/1.3559618]},
      keywords     = {J (WoSType)},
      cin          = {JARA-FIT / PGI-9},
      ddc          = {530},
      cid          = {$I:(DE-82)080009_20140620$ / I:(DE-Juel1)PGI-9-20110106},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000288277200063},
      doi          = {10.1063/1.3559618},
      url          = {https://juser.fz-juelich.de/record/23228},
}