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024 7 _ |2 DOI
|a 10.1063/1.3559618
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|a Physics, Applied
100 1 _ |0 P:(DE-Juel1)VDB89091
|a Gotschke, T.
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|u FZJ
245 _ _ |a Influence of the adatom diffusion on selective growth of GaN nanowire regular arrays
260 _ _ |a Melville, NY
|b American Institute of Physics
|c 2011
300 _ _ |a 103102
336 7 _ |a Journal Article
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440 _ 0 |0 562
|a Applied Physics Letters
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|x 0003-6951
|y 10
500 _ _ |3 POF3_Assignment on 2016-02-29
500 _ _ |a The authors wish to thank K. H. Deussen for technical support. We furthermore thank R. Hey for a critical reading of the paper. This work was financially supported by the German Ministry of Education and Research project "EPHQUAM" (01BL0904).
520 _ _ |a Molecular beam epitaxy (MBE) on patterned Si/AlN/Si(111) substrates was used to obtain regular arrays of uniform-size GaN nanowires (NWs). The silicon top layer has been patterned with e-beam lithography, resulting in uniform arrays of holes with different diameters (d(h)) and periods (P). While the NW length is almost insensitive to the array parameters, the diameter increases significantly with d(h) and P till it saturates at P values higher than 800 nm. A diffusion induced model was used to explain the experimental results with an effective diffusion length of the adatoms on the Si, estimated to be about 400 nm. (C) 2011 American Institute of Physics. [doi:10.1063/1.3559618]
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|a Calarco, R.
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|t Applied physics letters
|v 98
|x 0003-6951
|y 2011
856 7 _ |u http://dx.doi.org/10.1063/1.3559618
856 4 _ |u https://juser.fz-juelich.de/record/23228/files/FZJ-23228.pdf
|y Published under German "Allianz" Licensing conditions on 2011-03-08. Available in OpenAccess from 2011-03-08
|z Published final document.
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