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000023231 084__ $$2WoS$$aNanoscience & Nanotechnology
000023231 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000023231 084__ $$2WoS$$aPhysics, Applied
000023231 1001_ $$0P:(DE-Juel1)VDB89090$$aLimbach, F.$$b0$$uFZJ
000023231 245__ $$aStructural and optical properties of InGaN - GaN nanowire heterostructures grown by Molecular Beam Epitaxy
000023231 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2011
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000023231 440_0 $$03051$$aJournal of Applied Physics$$v109$$x0021-8979
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000023231 500__ $$aThis work was partly supported by the French National Research Agency (ANR) through Carnot founding and through Nanoscience and Nanotechnology Program (Project BONAFO No ANR-08-NANO-031-01).
000023231 520__ $$aThe structural and optical properties of InGaN/GaN nanowire heterostructures grown by plasma-assisted molecular beam epitaxy have been studied using a combination of transmission electron microscopy, electron tomography and photoluminescence spectroscopy. It is found that, depending on In content, the strain relaxation of InGaN may be elastic or plastic. Elastic relaxation results in a pronounced radial In content gradient. Plastic relaxation is associated with the formation of misfit dislocations at the InGaN/GaN interface or with cracks in the InGaN nanowire section. In all cases, a GaN shell was formed around the InGaN core, which is assigned to differences in In and Ga diffusion mean free paths.
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000023231 7001_ $$0P:(DE-Juel1)VDB89091$$aGotschke, T.$$b1$$uFZJ
000023231 7001_ $$0P:(DE-Juel1)VDB5575$$aStoica, T.$$b2$$uFZJ
000023231 7001_ $$0P:(DE-Juel1)VDB12919$$aCalarco, R.$$b3$$uFZJ
000023231 7001_ $$0P:(DE-HGF)0$$aSutter, E.$$b4
000023231 7001_ $$0P:(DE-HGF)0$$aCiston, J.$$b5
000023231 7001_ $$0P:(DE-HGF)0$$aCusco, R.$$b6
000023231 7001_ $$0P:(DE-HGF)0$$aArtus, L.$$b7
000023231 7001_ $$0P:(DE-HGF)0$$aKremling, S.$$b8
000023231 7001_ $$0P:(DE-HGF)0$$aHöfling, S.$$b9
000023231 7001_ $$0P:(DE-HGF)0$$aWorschech, L.$$b10
000023231 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, D.$$b11$$uFZJ
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000023231 8567_ $$uhttp://dx.doi.org/10.1088/0957-4484/22/7/075601
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