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@ARTICLE{Limbach:23231,
      author       = {Limbach, F. and Gotschke, T. and Stoica, T. and Calarco, R.
                      and Sutter, E. and Ciston, J. and Cusco, R. and Artus, L.
                      and Kremling, S. and Höfling, S. and Worschech, L. and
                      Grützmacher, D.},
      title        = {{S}tructural and optical properties of {I}n{G}a{N} -
                      {G}a{N} nanowire heterostructures grown by {M}olecular
                      {B}eam {E}pitaxy},
      journal      = {Journal of applied physics},
      volume       = {22},
      issn         = {0021-8979},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-23231},
      pages        = {014309},
      year         = {2011},
      note         = {This work was partly supported by the French National
                      Research Agency (ANR) through Carnot founding and through
                      Nanoscience and Nanotechnology Program (Project BONAFO No
                      ANR-08-NANO-031-01).},
      abstract     = {The structural and optical properties of InGaN/GaN nanowire
                      heterostructures grown by plasma-assisted molecular beam
                      epitaxy have been studied using a combination of
                      transmission electron microscopy, electron tomography and
                      photoluminescence spectroscopy. It is found that, depending
                      on In content, the strain relaxation of InGaN may be elastic
                      or plastic. Elastic relaxation results in a pronounced
                      radial In content gradient. Plastic relaxation is associated
                      with the formation of misfit dislocations at the InGaN/GaN
                      interface or with cracks in the InGaN nanowire section. In
                      all cases, a GaN shell was formed around the InGaN core,
                      which is assigned to differences in In and Ga diffusion mean
                      free paths.},
      keywords     = {J (WoSType)},
      cin          = {JARA-FIT / PGI-9},
      ddc          = {530},
      cid          = {$I:(DE-82)080009_20140620$ / I:(DE-Juel1)PGI-9-20110106},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Nanoscience $\&$ Nanotechnology / Materials Science,
                      Multidisciplinary / Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:21233547},
      UT           = {WOS:000286316000011},
      doi          = {10.1088/0957-4484/22/7/075601},
      url          = {https://juser.fz-juelich.de/record/23231},
}