Hauptseite > Publikationsdatenbank > Comparison of the resistive switching behavior in Nb2O5 thin films grown by atomic layer deposition and sputtering > RIS |
TY - CONF AU - Aslam, N. AU - Blanquart, T. AU - Mähne, H. TI - Comparison of the resistive switching behavior in Nb2O5 thin films grown by atomic layer deposition and sputtering M1 - PreJuSER-23354 PY - 2012 N1 - Record converted from VDB: 16.11.2012 Y2 - 9 Jan 2012 M2 - Helsinki, Finland, LB - PUB:(DE-HGF)6 UR - https://juser.fz-juelich.de/record/23354 ER -