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@INPROCEEDINGS{Aslam:23356,
      author       = {Aslam, N. and Blanquart, T. and Mähne, H.},
      title        = {{R}esistance switching in {P}t/{N}b2{O}5/{T}i/{P}t
                      cross-point structures with about 10 nm by {ALD} and
                      {S}puttering},
      reportid     = {PreJuSER-23356},
      year         = {2012},
      note         = {Record converted from VDB: 16.11.2012},
      comment      = {WODIM Conference: Dielectrics in Miroelectronicsw},
      booktitle     = {WODIM Conference: Dielectrics in
                       Miroelectronicsw},
      month         = {Jun},
      date          = {2012-06-25},
      organization  = {Dresden, 25 Jun 2012},
      cin          = {JARA-FIT / PGI-7},
      cid          = {$I:(DE-82)080009_20140620$ / I:(DE-Juel1)PGI-7-20110106},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      typ          = {PUB:(DE-HGF)6},
      url          = {https://juser.fz-juelich.de/record/23356},
}