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@ARTICLE{He:23696,
      author       = {He, J. Q. and Regnery, S. and Jia, C. L. and Qin, Y. L. and
                      Fitsilis, F. and Ehrhart, P. and Waser, R. and Urban, K. and
                      Wang, R. H.},
      title        = {{I}nterfacial and microstructural properties of
                      {S}r{T}i{O}3 thin films grown on {S}i(001) substrates},
      journal      = {Journal of applied physics},
      volume       = {92},
      issn         = {0021-8979},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-23696},
      pages        = {7200 - 7205},
      year         = {2002},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {The microstructure and interfaces of SrTiO3 thin films
                      directly deposited by metalorganic chemical vapor deposition
                      on silicon (001) substrates were investigated by means of
                      Bragg-diffraction contrast and high-resolution transmission
                      electron microscopy. The observation of the plan-view
                      specimens showed that the SrTiO3 films are polycrystalline
                      with randomly oriented grains. An amorphous layer was
                      observed at the interfaces between the films and the
                      substrates. The growth kinetics of this amorphous layer was
                      investigated in detail. The thickness showed a rapid initial
                      increase, which is much faster than the corresponding growth
                      of amorphous SiO2 in the absence of precursors, and
                      apparently approaches saturation after a short time. The
                      thickness of the interfacial layer increases with the oxygen
                      partial pressure during deposition and a reduction to a
                      value acceptable for gate-oxide applications has been
                      achieved for the minimum pressure given by the oxygen
                      content of the present precursors. However, this comes at
                      the cost of a dramatic increase of the carbon content of the
                      film. (C) 2002 American Institute of Physics.},
      keywords     = {J (WoSType)},
      cin          = {IFF-EKM / IFF-IMF},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB35 / I:(DE-Juel1)VDB37},
      pnm          = {Kondensierte Materie},
      pid          = {G:(DE-Juel1)FUEK242},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000179495100036},
      doi          = {10.1063/1.1522475},
      url          = {https://juser.fz-juelich.de/record/23696},
}