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000023919 0247_ $$2DOI$$a10.1116/1.1450585
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000023919 084__ $$2WoS$$aMaterials Science, Coatings & Films
000023919 084__ $$2WoS$$aPhysics, Applied
000023919 1001_ $$0P:(DE-Juel1)VDB5948$$aRoschek, T.$$b0$$uFZJ
000023919 245__ $$aComprehensive study of microcrystalline silicon solar cells deposited at high rate using 13.56 MHz plasma-enhanced chemical vapor deposition
000023919 260__ $$aNew York, NY$$bInst.$$c2002
000023919 300__ $$a492 - 498
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000023919 440_0 $$03987$$aJournal of Vacuum Science and Technology A$$v20$$x0734-2101
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000023919 520__ $$aIn this article we present a comprehensive study of microcrystalline silicon (PC-Si:H) p-i-n solar cells prepared by using plasma-enhanced chemical vapor deposition (PECVD) at 13.56 MHz excitation frequency. In the first step the cell development was performed in a small area PECVD reactor showing the relationship between the deposition process parameters and the resulting solar cell performance. Subsequent up-scaling to a substrate area of 30 X 30 cm confirmed the scalability of optimized deposition parameters to large area reactors. We investigated the deposition regime of high rf power P (rf) (0.25-0.7 W/cm(2)) and high deposition pressure P (dep) (1 - 11 Torr) for the muc-Si:H i layer. Furthermore, the influence of silane concentration and deposition temperature was studied. A transition between amorphous and microcrystalline growth could be achieved by a variation of either deposition pressure, plasma power, or silane concentration. The best microcrystalline silicon solar cells were prepared close to the transition to amorphous growth. A high deposition pressure was a prerequisite for obtaining, high quality material at a high growth rate. The best solar cell efficiencies achieved so far are 8.1% and 6.6% at i-layer growth rates of 5 and 10 Angstrom/s, respectively, for muc-Si:H single junction cells. Applied in a-Si:H/muc-Si:H tandem cells a stabilized efficiency of 10.0% was achieved. (C) 2002 American Vacuum Society.
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000023919 7001_ $$0P:(DE-Juel1)VDB5981$$aRepmann, T.$$b1$$uFZJ
000023919 7001_ $$0P:(DE-Juel1)VDB2892$$aMüller, J.$$b2$$uFZJ
000023919 7001_ $$0P:(DE-Juel1)VDB5941$$aRech, B.$$b3$$uFZJ
000023919 7001_ $$0P:(DE-Juel1)VDB5911$$aWagner, H.$$b4$$uFZJ
000023919 773__ $$0PERI:(DE-600)1475424-1$$a10.1116/1.1450585$$gVol. 20, p. 492 - 498$$p492 - 498$$q20<492 - 498$$tJournal of vacuum science & technology / A$$v20$$x0734-2101$$y2002
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000023919 9131_ $$0G:(DE-Juel1)FUEK247$$bEnergie$$kE02$$lErneuerbare Energien$$vPhotovoltaik$$x0
000023919 9141_ $$y2002
000023919 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000023919 9201_ $$0I:(DE-Juel1)VDB46$$d31.12.2006$$gIPV$$kIPV$$lInstitut für Photovoltaik$$x0
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